CA1150388A - Lasers a semiconducteur a grande puissance - Google Patents

Lasers a semiconducteur a grande puissance

Info

Publication number
CA1150388A
CA1150388A CA000401935A CA401935A CA1150388A CA 1150388 A CA1150388 A CA 1150388A CA 000401935 A CA000401935 A CA 000401935A CA 401935 A CA401935 A CA 401935A CA 1150388 A CA1150388 A CA 1150388A
Authority
CA
Canada
Prior art keywords
laser
substrate
heterostructure
channels
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000401935A
Other languages
English (en)
Inventor
Frank L. Weichman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Corp
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA000401935A priority Critical patent/CA1150388A/fr
Application granted granted Critical
Publication of CA1150388A publication Critical patent/CA1150388A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
CA000401935A 1982-04-29 1982-04-29 Lasers a semiconducteur a grande puissance Expired CA1150388A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000401935A CA1150388A (fr) 1982-04-29 1982-04-29 Lasers a semiconducteur a grande puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000401935A CA1150388A (fr) 1982-04-29 1982-04-29 Lasers a semiconducteur a grande puissance

Publications (1)

Publication Number Publication Date
CA1150388A true CA1150388A (fr) 1983-07-19

Family

ID=4122681

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000401935A Expired CA1150388A (fr) 1982-04-29 1982-04-29 Lasers a semiconducteur a grande puissance

Country Status (1)

Country Link
CA (1) CA1150388A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0199588A2 (fr) * 1985-04-23 1986-10-29 Sharp Kabushiki Kaisha Dispositif laser à semi-conducteur
DE3626701A1 (de) * 1985-08-09 1987-02-19 Sharp Kk Halbleiter-laseranordnung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0199588A2 (fr) * 1985-04-23 1986-10-29 Sharp Kabushiki Kaisha Dispositif laser à semi-conducteur
EP0199588A3 (en) * 1985-04-23 1988-01-13 Sharp Kabushiki Kaisha A semiconductor laser device
US4819245A (en) * 1985-04-23 1989-04-04 Sharp Kabushiki Kaisha Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion
DE3626701A1 (de) * 1985-08-09 1987-02-19 Sharp Kk Halbleiter-laseranordnung
US4751709A (en) * 1985-08-09 1988-06-14 Sharp Kabushiki Kaisha Semiconductor laser array device

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