CA1170783A - Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne - Google Patents

Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne

Info

Publication number
CA1170783A
CA1170783A CA000423252A CA423252A CA1170783A CA 1170783 A CA1170783 A CA 1170783A CA 000423252 A CA000423252 A CA 000423252A CA 423252 A CA423252 A CA 423252A CA 1170783 A CA1170783 A CA 1170783A
Authority
CA
Canada
Prior art keywords
layer
pocket
conductivity type
type impurity
integrated injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000423252A
Other languages
English (en)
Inventor
Madhukar B. Vora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/118,178 external-priority patent/US4322882A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Priority to CA000423252A priority Critical patent/CA1170783A/fr
Application granted granted Critical
Publication of CA1170783A publication Critical patent/CA1170783A/fr
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
CA000423252A 1980-02-04 1983-03-09 Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne Expired CA1170783A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000423252A CA1170783A (fr) 1980-02-04 1983-03-09 Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/118,178 US4322882A (en) 1980-02-04 1980-02-04 Method for making an integrated injection logic structure including a self-aligned base contact
US118,178 1980-02-04
CA000367739A CA1148667A (fr) 1980-02-04 1980-12-30 Methode de fabrication de circuits logiques integres a injection comprenant un contact de base auto-aligne
CA000423252A CA1170783A (fr) 1980-02-04 1983-03-09 Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne

Publications (1)

Publication Number Publication Date
CA1170783A true CA1170783A (fr) 1984-07-10

Family

ID=27166924

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000423252A Expired CA1170783A (fr) 1980-02-04 1983-03-09 Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne

Country Status (1)

Country Link
CA (1) CA1170783A (fr)

Similar Documents

Publication Publication Date Title
US4504332A (en) Method of making a bipolar transistor
JPS62588B2 (fr)
EP0033495B1 (fr) Procédé de fabrication d'un transistor bipolaire à grande vitesse
US4891328A (en) Method of manufacturing field effect transistors and lateral bipolar transistors on the same substrate
JPH05347383A (ja) 集積回路の製法
CA1148667A (fr) Methode de fabrication de circuits logiques integres a injection comprenant un contact de base auto-aligne
GB1589938A (en) Semiconductor devices and their manufacture
KR930003144B1 (ko) 반도체장치의 제조방법
EP0051534B1 (fr) Procédé de fabrication auto-alignée de structures de circuits intégrés employant différents taux de croissance de l'oxyde
JPH0630359B2 (ja) バイポーラトランジスタの製造方法
EP0078725B1 (fr) Procédé de fabrication de transistors bipolaires de dimensions inférieures au micron sans croissance épitaxiale et structure résultante
US4965219A (en) Method for the manufacturing of insulated gate field effect transistors (IGFETS) having a high response speed in high density integrated circuits
EP0078220B1 (fr) Interférences de silicium polycristallin pour transistors bipolaires en circuit flip-flop
US3972754A (en) Method for forming dielectric isolation in integrated circuits
US3997378A (en) Method of manufacturing a semiconductor device utilizing monocrystalline-polycrystalline growth
US3953255A (en) Fabrication of matched complementary transistors in integrated circuits
EP0337720B1 (fr) Méthode de fabrication d'un transistor bipolaire
US6004855A (en) Process for producing a high performance bipolar structure
JPH0235460B2 (fr)
US3825450A (en) Method for fabricating polycrystalline structures for integrated circuits
CA1170783A (fr) Methode de fabrication de structures logiques integrees a injection avec contact de base auto-aligne
US5236851A (en) Method for fabricating semiconductor devices
CA1205577A (fr) Dispositif semiconducteur
JPH0715912B2 (ja) 相補的垂直バイポーラトランジスタ及びその製造方法
EP0367293B1 (fr) Méthodes de fabrication de dispositifs semi-conducteurs comprenant un transistor bipolaire

Legal Events

Date Code Title Description
MKEX Expiry