CA1157168A - Ctd line having a plurality of ctd elements - Google Patents
Ctd line having a plurality of ctd elementsInfo
- Publication number
- CA1157168A CA1157168A CA000377819A CA377819A CA1157168A CA 1157168 A CA1157168 A CA 1157168A CA 000377819 A CA000377819 A CA 000377819A CA 377819 A CA377819 A CA 377819A CA 1157168 A CA1157168 A CA 1157168A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- ctd
- division
- ridges
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 5
- 206010052804 Drug tolerance Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H15/00—Transversal filters
- H03H15/02—Transversal filters using analogue shift registers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
- Supply And Distribution Of Alternating Current (AREA)
Abstract
ABSTRACT
In prior art filters using CTD (charge transfer device) lines and having relatively narrow band widths, the capacitance ratios of the CTD lines employed differ significantly, which leads to difficulties with respect to tolerances in the manu-facturing process. The present invention provides a CTD line consisting of a plurality of CTD elements with which one obtains any random division ratio without the influence of the tolerances having a negative influence at the same time. The CTD line has a plurality of CTD elements with separating ridges for charge division oriented in the direction of charge transport, the ridges being applied as thick oxide ridges or channel-stop regions. The separation ridges for successive stages are disposed to yield a charge division in the ratio of approximately 1:1. A plurality of summation sections are provided between the division stages, all remaining partial charges with the exception of only one partial charge being summed in the summation sections.
In prior art filters using CTD (charge transfer device) lines and having relatively narrow band widths, the capacitance ratios of the CTD lines employed differ significantly, which leads to difficulties with respect to tolerances in the manu-facturing process. The present invention provides a CTD line consisting of a plurality of CTD elements with which one obtains any random division ratio without the influence of the tolerances having a negative influence at the same time. The CTD line has a plurality of CTD elements with separating ridges for charge division oriented in the direction of charge transport, the ridges being applied as thick oxide ridges or channel-stop regions. The separation ridges for successive stages are disposed to yield a charge division in the ratio of approximately 1:1. A plurality of summation sections are provided between the division stages, all remaining partial charges with the exception of only one partial charge being summed in the summation sections.
Description
~lS71~j8 S P E C I F I C A T I O N
T I T L E
"CTD LINE HAVING A P~URALITY OF CTD ELEMENTS~
BACRGROUND OF THE INVENTION
Field of the Invention The invention relates to a CTD line having a plurality of CTD elements in which separating ridges are oriented in the direction of the charge distribution, the ridges being specifically applied in the manner of thick oxide ridges or ~.~
channel-stop regions.
CTD elements and CTD lines of the aforementioned type are known, and are described in the periodical "Elektronikn, 1974, No.
1, pages 3 through 8. The article "Ladungsverschiebeschaltungen"
in such periodical treats the manner of functioning of such CTD
circuits in detail and it also describes that so-called bucket brigade circuits (BBD circuits) and so-called charge-coupled circuits (CCD circuits), are also to be understood by that term.
The abbreviations CTD and CCD are abbreviations taken from English-language technical literature which have the meaning "charge transfer devices", "bucket brigade devices" and "charge coupled devices", respectively.
Such CTD lines are also described in the book "Charge Transfer Devices" by Sequin and Tompsett, Academic Press, New York, San Francisco, London, 1975. On pages 43 and 44 of that book, i~ is described that so-called "channel-stop-diffusion regions" can be provided in addition to thick oxide ridges as separating ridges. Combinations of these two methods are likewise possible. It is also known that layers consisting of thin oxide and thick oxide may be employed for the insulation of conducting surfaces.
Such charge transfer circuits can be employed for the realization of integrated filter circuits. See German Letters ~, q~
11571~8 Patent 2,453,669 and 2,555,835. Circuits are specified in these patents which require a firmly prescribed capacitance ratio to one another. Given the filter circuits desired there, when filters with relatively narrow band width are described, then the capacitance ratios of the CTD lines to be employed differ signi-ficantly, which in turn leads to difficulties with respect to the tolerances in the technological manufacturing process. This is because in the manufacturing process, the tolerances which occur, for example, in the masks to be employed as well as in the technological process, lead to changes in the channel width and the electrode length of such CTD arrangements. Scatterings also derive in the active electrode surfaces. The charge distribution affects the ratio of the electrocapacitances so that such toler-ances have a direct effect on the filter characteristic as well.
The aforementioned references are only to be considered as examples, because the task of distributing charges in a definite ratio, occurs over and over even in other such CTD lines.
SU~ARY OF TE~E INVENTION
The object of the present invention is to specify a CTD
line consisting of a plurality of CTD elements with which one obtains any random division ratio without the influence of the tolerances having a negative influence at the same time.
This object is achieved, in achieving a prescribed charge division ratio, because the charge division takes place in more than one step, with the separation ridges for successive division steps being disposed in such manner that a charge divsion in the ratio of approximately 1:1 results for the individual step, and summation sections are provided between the division stages, all remaining partial charges (with the exception of only one partial charge) being summed in said summation sections.
In one advantageous embodiment of the present invention, one can provide a channel expansion for the partial branch con-~57~8 ducting the smaller charge component.
In the present invention, any random division ratio canbe realized by means of a plurality of division ratios of respec-tively approximately 1:1 which have a cumulative effect.
BRIEF DESCRIPTION OF THE DRAWING
Reference will now be made to the accompanying drawing, which shows a four-stage charge division with a division ratio A:B per stage.
DESCRIPTION OF THE PREFERRED EMBODIMENT
In the apparatus shown, separation of the charge packets is provided by means of thick oxide ridges. In order to avoid an increase of the surface charge density-, the channel width is increased with each thick oxide ridge. The charge division and channel expansion is undertaken under different electrodes. The charge component Ai is divided at the next stage in, for example, the ratio A:B = Ai+l:Bifl, whereby the charges are subsequently summed under the B-surfaces.
The following relation applies in general for random division ratios Ai:Bi: n qA = A1 x A2 x .................. x An = ~ Aj qges (Al+Bl) (A2+B~ ( n Bn) j =l (Aj+Bj) K = qB = 1 - qA ; K = 1 ~ ~ r qges qges j=l LAj+Bj~
In the above, n indicates the number of division steps, i.e., of stages and j denotes a counting or numerical variable.
qA qges (A+B) applies for the resultant charge qA at the output for n stages with a respectively identical division ratio A/B.
Analogously, the relation K = _B = 1 _( A
qg~ s 11571~8 is valid for the division factor K.
Given narrow channels or large division ratios, i.e., many stages, the CCD channel for the last stages must be expanded so that the channel width is not less than the technologically conditioned channel width. This expansion is subsequently reversed in channel B. A constant surface charge density can be obtained in such manner. The influence of the poorer transmission coefficient E of the channel expansion is slight, since only a small charge component is affected by it for a few elements.
It can be understood from the Figure that the charge qges flows into the CTD line at the input of the CTD line and that a channel width W is set there which is limited by means of thick oxide layers DOX. The surfaces referenced with ~poly-Sil" and "poly-Si2" are electrode surfaces which mutually alternate and which, if need be, can overlap. The individual partial charges are referenced with A and B, and the corresponding indices in each stage show how the individual partial charges are divided or, respectively, add up. The charge division takes place in more than one step, and thick oxide ridges, oriented in the direction of the charge transport, are provided for this purpose, such ridges being likewise referenced with DOX. The ridges are disposed in such manner that, for instance, a charge distribution in the ratio of 1:1 ensues for successive division steps. The summation sections Cl through C3 can also be seen in the Figure, all remaining partial charges 81, Bl+B2, Bl+B2+B3 with the exception of only one partial charge being summed in such summation sections. As already explained above, the channel A
can then be expanded in the area 3 if the division ratio to be achieved is particularly large, whereby the output 6, at which the charge qa* appears, can be realized as a CTD line whose manufacturing tolerances can still be well governed. A correc-;8 tion of the channel expansion for the charge components B isagain undertaken in the area 5, in such manner that the channel obtains a smaller width W' = K W in said area in accord with the equation already cited for K. A constant surface charge density can be achieved by means of this feature. As shown in the Figure, the charge qB* appears at the output 7. Accordingly, R =
qB*/qges likewise applies.
By means of the measures described above, the described CTD lines are produced in such a way that scatterings in the manufacture can be minimized by means of a successive charge division. In accord with the generally prescribed charge divi-sion ratio, a certain minimum number of CTD elements is required for this purpose; however, this requirement can be accepted in view of the precision to be achieved in the practical realization of such arrangements.
It will be understood that various modifications and additions may be made in the subject matter of the invention without departing from the essential features of novelty thereof, which are intended to be defined and secured by the appended claims.
T I T L E
"CTD LINE HAVING A P~URALITY OF CTD ELEMENTS~
BACRGROUND OF THE INVENTION
Field of the Invention The invention relates to a CTD line having a plurality of CTD elements in which separating ridges are oriented in the direction of the charge distribution, the ridges being specifically applied in the manner of thick oxide ridges or ~.~
channel-stop regions.
CTD elements and CTD lines of the aforementioned type are known, and are described in the periodical "Elektronikn, 1974, No.
1, pages 3 through 8. The article "Ladungsverschiebeschaltungen"
in such periodical treats the manner of functioning of such CTD
circuits in detail and it also describes that so-called bucket brigade circuits (BBD circuits) and so-called charge-coupled circuits (CCD circuits), are also to be understood by that term.
The abbreviations CTD and CCD are abbreviations taken from English-language technical literature which have the meaning "charge transfer devices", "bucket brigade devices" and "charge coupled devices", respectively.
Such CTD lines are also described in the book "Charge Transfer Devices" by Sequin and Tompsett, Academic Press, New York, San Francisco, London, 1975. On pages 43 and 44 of that book, i~ is described that so-called "channel-stop-diffusion regions" can be provided in addition to thick oxide ridges as separating ridges. Combinations of these two methods are likewise possible. It is also known that layers consisting of thin oxide and thick oxide may be employed for the insulation of conducting surfaces.
Such charge transfer circuits can be employed for the realization of integrated filter circuits. See German Letters ~, q~
11571~8 Patent 2,453,669 and 2,555,835. Circuits are specified in these patents which require a firmly prescribed capacitance ratio to one another. Given the filter circuits desired there, when filters with relatively narrow band width are described, then the capacitance ratios of the CTD lines to be employed differ signi-ficantly, which in turn leads to difficulties with respect to the tolerances in the technological manufacturing process. This is because in the manufacturing process, the tolerances which occur, for example, in the masks to be employed as well as in the technological process, lead to changes in the channel width and the electrode length of such CTD arrangements. Scatterings also derive in the active electrode surfaces. The charge distribution affects the ratio of the electrocapacitances so that such toler-ances have a direct effect on the filter characteristic as well.
The aforementioned references are only to be considered as examples, because the task of distributing charges in a definite ratio, occurs over and over even in other such CTD lines.
SU~ARY OF TE~E INVENTION
The object of the present invention is to specify a CTD
line consisting of a plurality of CTD elements with which one obtains any random division ratio without the influence of the tolerances having a negative influence at the same time.
This object is achieved, in achieving a prescribed charge division ratio, because the charge division takes place in more than one step, with the separation ridges for successive division steps being disposed in such manner that a charge divsion in the ratio of approximately 1:1 results for the individual step, and summation sections are provided between the division stages, all remaining partial charges (with the exception of only one partial charge) being summed in said summation sections.
In one advantageous embodiment of the present invention, one can provide a channel expansion for the partial branch con-~57~8 ducting the smaller charge component.
In the present invention, any random division ratio canbe realized by means of a plurality of division ratios of respec-tively approximately 1:1 which have a cumulative effect.
BRIEF DESCRIPTION OF THE DRAWING
Reference will now be made to the accompanying drawing, which shows a four-stage charge division with a division ratio A:B per stage.
DESCRIPTION OF THE PREFERRED EMBODIMENT
In the apparatus shown, separation of the charge packets is provided by means of thick oxide ridges. In order to avoid an increase of the surface charge density-, the channel width is increased with each thick oxide ridge. The charge division and channel expansion is undertaken under different electrodes. The charge component Ai is divided at the next stage in, for example, the ratio A:B = Ai+l:Bifl, whereby the charges are subsequently summed under the B-surfaces.
The following relation applies in general for random division ratios Ai:Bi: n qA = A1 x A2 x .................. x An = ~ Aj qges (Al+Bl) (A2+B~ ( n Bn) j =l (Aj+Bj) K = qB = 1 - qA ; K = 1 ~ ~ r qges qges j=l LAj+Bj~
In the above, n indicates the number of division steps, i.e., of stages and j denotes a counting or numerical variable.
qA qges (A+B) applies for the resultant charge qA at the output for n stages with a respectively identical division ratio A/B.
Analogously, the relation K = _B = 1 _( A
qg~ s 11571~8 is valid for the division factor K.
Given narrow channels or large division ratios, i.e., many stages, the CCD channel for the last stages must be expanded so that the channel width is not less than the technologically conditioned channel width. This expansion is subsequently reversed in channel B. A constant surface charge density can be obtained in such manner. The influence of the poorer transmission coefficient E of the channel expansion is slight, since only a small charge component is affected by it for a few elements.
It can be understood from the Figure that the charge qges flows into the CTD line at the input of the CTD line and that a channel width W is set there which is limited by means of thick oxide layers DOX. The surfaces referenced with ~poly-Sil" and "poly-Si2" are electrode surfaces which mutually alternate and which, if need be, can overlap. The individual partial charges are referenced with A and B, and the corresponding indices in each stage show how the individual partial charges are divided or, respectively, add up. The charge division takes place in more than one step, and thick oxide ridges, oriented in the direction of the charge transport, are provided for this purpose, such ridges being likewise referenced with DOX. The ridges are disposed in such manner that, for instance, a charge distribution in the ratio of 1:1 ensues for successive division steps. The summation sections Cl through C3 can also be seen in the Figure, all remaining partial charges 81, Bl+B2, Bl+B2+B3 with the exception of only one partial charge being summed in such summation sections. As already explained above, the channel A
can then be expanded in the area 3 if the division ratio to be achieved is particularly large, whereby the output 6, at which the charge qa* appears, can be realized as a CTD line whose manufacturing tolerances can still be well governed. A correc-;8 tion of the channel expansion for the charge components B isagain undertaken in the area 5, in such manner that the channel obtains a smaller width W' = K W in said area in accord with the equation already cited for K. A constant surface charge density can be achieved by means of this feature. As shown in the Figure, the charge qB* appears at the output 7. Accordingly, R =
qB*/qges likewise applies.
By means of the measures described above, the described CTD lines are produced in such a way that scatterings in the manufacture can be minimized by means of a successive charge division. In accord with the generally prescribed charge divi-sion ratio, a certain minimum number of CTD elements is required for this purpose; however, this requirement can be accepted in view of the precision to be achieved in the practical realization of such arrangements.
It will be understood that various modifications and additions may be made in the subject matter of the invention without departing from the essential features of novelty thereof, which are intended to be defined and secured by the appended claims.
Claims (8)
1. In a CTD line having a plurality of CTD elements in with separating ridges for charge division oriented in the direction of the charge transport, such ridges being applied as thick oxide ridges or channel-stop regions, the combination comprising: a plurality of successive charge division stages, the separation ridges for successive stages being disposed to yield a charge division in the ratio of approximately 1:1, and plurality of summation sections provided between the division stages, all remaining partial charges with the exception of only one partial charge being summed in said summation sections.
2. Apparatus according to claim 1, including a channel expansion provided for the channel carrying the smaller charge component.
3. Apparatus according to claim 2, wherein said channel is increased at each stage to provide a substantially constant surface charge density.
4. Apparatus according to claim 2, including a narrowing of the other channel, whereby a substantially constant charge density is obtained.
5. Apparatus according to claim 4, wherein said other channel is narrowed by the factor K, where K is
6. The method of arranging a CTD line for charge division which is substantially independent of manufacturing tolerances, comprising the steps of, providing each of a plurality of charge division stages with a separation ridge oriented in the direction of the charge transport, disposed to yield a charge division in the ratio of approximately 1:1;
providing summation sections between the division stages for summing all remining charges with the exception of only one partial charge.
providing summation sections between the division stages for summing all remining charges with the exception of only one partial charge.
7. The method according to claim 6, including the step of expanding the channel carrying the smaller charge component.
8. The method according to claim 7, including the step of narrowing the other channel, to obtain a substantially constant charge density.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP3019437.7 | 1980-05-21 | ||
| DE19803019437 DE3019437C2 (en) | 1980-05-21 | 1980-05-21 | CTD line consisting of several CTD elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1157168A true CA1157168A (en) | 1983-11-15 |
Family
ID=6102981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000377819A Expired CA1157168A (en) | 1980-05-21 | 1981-05-19 | Ctd line having a plurality of ctd elements |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0040423A3 (en) |
| JP (1) | JPS592190B2 (en) |
| CA (1) | CA1157168A (en) |
| DE (1) | DE3019437C2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102232437B1 (en) * | 2019-08-19 | 2021-03-26 | 주식회사 만도 | Damping force controlling shock absorber |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2453669C2 (en) * | 1974-11-12 | 1976-12-09 | Siemens AG, 1000 Berlin und 8000 München | Electric filter circuit |
| US4156858A (en) * | 1977-06-02 | 1979-05-29 | Reticon Corporation | Charge transfer transversal filter |
| US4120035A (en) * | 1977-08-16 | 1978-10-10 | International Business Machines Corporation | Electrically reprogrammable transversal filter using charge coupled devices |
| GB2004692B (en) * | 1977-09-08 | 1982-01-13 | Secr Defence | Charge transfer devices |
| FR2404281A1 (en) * | 1977-09-23 | 1979-04-20 | Thomson Csf | PRECISION LOAD TRANSFER DEVICE, ESPECIALLY FOR SIGNAL PROCESSING SYSTEM, AND SIGNAL PROCESSING SYSTEM INCLUDING SUCH A DEVICE |
| NL186666C (en) * | 1977-10-13 | 1992-03-16 | Philips Nv | CARGO TRANSFER. |
-
1980
- 1980-05-21 DE DE19803019437 patent/DE3019437C2/en not_active Expired
-
1981
- 1981-05-13 JP JP7085681A patent/JPS592190B2/en not_active Expired
- 1981-05-18 EP EP81103804A patent/EP0040423A3/en not_active Ceased
- 1981-05-19 CA CA000377819A patent/CA1157168A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3019437A1 (en) | 1981-11-26 |
| JPS577965A (en) | 1982-01-16 |
| EP0040423A3 (en) | 1984-06-06 |
| JPS592190B2 (en) | 1984-01-17 |
| EP0040423A2 (en) | 1981-11-25 |
| DE3019437C2 (en) | 1985-08-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |