CA1094229A - Traduction non-disponible - Google Patents
Traduction non-disponibleInfo
- Publication number
- CA1094229A CA1094229A CA290,160A CA290160A CA1094229A CA 1094229 A CA1094229 A CA 1094229A CA 290160 A CA290160 A CA 290160A CA 1094229 A CA1094229 A CA 1094229A
- Authority
- CA
- Canada
- Prior art keywords
- diaphragm
- electrode
- layer
- silicon
- resonant circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 239000012528 membrane Substances 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 210000000188 diaphragm Anatomy 0.000 claims description 133
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 230000004044 response Effects 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 229920000136 polysorbate Polymers 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 claims 1
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000007787 solid Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 31
- 238000000034 method Methods 0.000 description 15
- 230000033001 locomotion Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000036366 Sensation of pressure Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15C—FLUID-CIRCUIT ELEMENTS PREDOMINANTLY USED FOR COMPUTING OR CONTROL PURPOSES
- F15C5/00—Manufacture of fluid circuit elements; Manufacture of assemblages of such elements integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
- G01L7/086—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type with optical transmitting or indicating means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Acoustics & Sound (AREA)
- Theoretical Computer Science (AREA)
- Fluid Mechanics (AREA)
- Mechanical Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73958376A | 1976-11-08 | 1976-11-08 | |
| US739,583 | 1985-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1094229A true CA1094229A (fr) | 1981-01-20 |
Family
ID=24972956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA290,160A Expired CA1094229A (fr) | 1976-11-08 | 1977-11-03 | Traduction non-disponible |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5363880A (fr) |
| CA (1) | CA1094229A (fr) |
| DE (1) | DE2749937A1 (fr) |
| GB (1) | GB1591948A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533795A (en) * | 1983-07-07 | 1985-08-06 | American Telephone And Telegraph | Integrated electroacoustic transducer |
| US4679434A (en) * | 1985-07-25 | 1987-07-14 | Litton Systems, Inc. | Integrated force balanced accelerometer |
| GB8718639D0 (en) * | 1987-08-06 | 1987-09-09 | Spectrol Reliance Ltd | Capacitive pressure sensors |
| JPH07104217B2 (ja) * | 1988-05-27 | 1995-11-13 | 横河電機株式会社 | 振動式トランスデューサとその製造方法 |
| DE19547184A1 (de) * | 1995-12-16 | 1997-06-19 | Bosch Gmbh Robert | Kraftsensor |
| WO1998025115A1 (fr) * | 1996-12-04 | 1998-06-11 | Siemens Aktiengesellschaft | Composant micromecanique d'enregistrement d'empreintes digitales |
| FR2864634B1 (fr) * | 2003-12-26 | 2006-02-24 | Commissariat Energie Atomique | Composants optiques et leur procede de realisation |
| US7825484B2 (en) * | 2005-04-25 | 2010-11-02 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
-
1977
- 1977-11-03 CA CA290,160A patent/CA1094229A/fr not_active Expired
- 1977-11-07 GB GB4626577A patent/GB1591948A/en not_active Expired
- 1977-11-08 JP JP13402077A patent/JPS5363880A/ja active Pending
- 1977-11-08 DE DE19772749937 patent/DE2749937A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE2749937A1 (de) | 1978-05-11 |
| GB1591948A (en) | 1981-07-01 |
| JPS5363880A (en) | 1978-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |