CA1086611A - Epitaxial growth of iiia-vb compounds at low temperatures - Google Patents
Epitaxial growth of iiia-vb compounds at low temperaturesInfo
- Publication number
- CA1086611A CA1086611A CA273,546A CA273546A CA1086611A CA 1086611 A CA1086611 A CA 1086611A CA 273546 A CA273546 A CA 273546A CA 1086611 A CA1086611 A CA 1086611A
- Authority
- CA
- Canada
- Prior art keywords
- temperature
- gaseous phase
- aiii
- epitaxial growth
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000007792 gaseous phase Substances 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 150000004820 halides Chemical class 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 230000008021 deposition Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7606832 | 1976-03-10 | ||
| FR7606832A FR2344123A1 (fr) | 1976-03-10 | 1976-03-10 | Procede de croissance epitaxiale a temperature homogene et basse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1086611A true CA1086611A (en) | 1980-09-30 |
Family
ID=9170220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA273,546A Expired CA1086611A (en) | 1976-03-10 | 1977-03-09 | Epitaxial growth of iiia-vb compounds at low temperatures |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4086109A (Direct) |
| JP (1) | JPS52123388A (Direct) |
| CA (1) | CA1086611A (Direct) |
| DE (1) | DE2709447A1 (Direct) |
| FR (1) | FR2344123A1 (Direct) |
| GB (1) | GB1572018A (Direct) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250148A (en) * | 1985-05-15 | 1993-10-05 | Research Development Corporation | Process for growing GaAs monocrystal film |
| US4783320A (en) * | 1985-11-25 | 1988-11-08 | The United States Of America As Represented By The Secretary Of The Air Force | Rapid synthesis of indium phosphide |
| US4689094A (en) * | 1985-12-24 | 1987-08-25 | Raytheon Company | Compensation doping of group III-V materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
| US3975218A (en) * | 1972-04-28 | 1976-08-17 | Semimetals, Inc. | Process for production of III-V compound epitaxial crystals |
| US3762945A (en) * | 1972-05-01 | 1973-10-02 | Bell Telephone Labor Inc | Technique for the fabrication of a millimeter wave beam lead schottkybarrier device |
| JPS5127525B2 (Direct) * | 1972-07-07 | 1976-08-13 | ||
| JPS5333390B2 (Direct) * | 1974-02-18 | 1978-09-13 |
-
1976
- 1976-03-10 FR FR7606832A patent/FR2344123A1/fr active Granted
-
1977
- 1977-03-04 US US05/774,524 patent/US4086109A/en not_active Expired - Lifetime
- 1977-03-04 DE DE19772709447 patent/DE2709447A1/de not_active Ceased
- 1977-03-07 GB GB9459/77A patent/GB1572018A/en not_active Expired
- 1977-03-08 JP JP2452177A patent/JPS52123388A/ja active Granted
- 1977-03-09 CA CA273,546A patent/CA1086611A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4086109A (en) | 1978-04-25 |
| DE2709447A1 (de) | 1977-09-22 |
| GB1572018A (en) | 1980-07-23 |
| FR2344123A1 (fr) | 1977-10-07 |
| FR2344123B1 (Direct) | 1978-08-25 |
| JPS52123388A (en) | 1977-10-17 |
| JPS548627B2 (Direct) | 1979-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tietjen et al. | The preparation and properties of vapor‐deposited epitaxial GaAs1− x P x using arsine and phosphine | |
| US3093517A (en) | Intermetallic semiconductor body formation | |
| US4193835A (en) | Method for growing semiconductor crystal | |
| US3312570A (en) | Production of epitaxial films of semiconductor compound material | |
| US3145125A (en) | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions | |
| Fry et al. | OMVPE growth of InP and Ga0. 47ln0. 53as using ethyldimethylindium | |
| US4886683A (en) | Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials | |
| Ihara et al. | Vapor‐phase epitaxial growth of GaAs in a nitrogen atmosphere | |
| US3348984A (en) | Method of growing doped crystalline layers of semiconductor material upon crystalline semiconductor bodies | |
| Kiyota et al. | Electrical properties of B-doped homoepitaxial diamond (001) film | |
| US4279670A (en) | Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material | |
| CA1086611A (en) | Epitaxial growth of iiia-vb compounds at low temperatures | |
| Hwang et al. | Thermodynamic approach to the chemical vapor deposition process | |
| US3653991A (en) | Method of producing epitactic growth layers of semiconductor material for electrical components | |
| US3290181A (en) | Method of producing pure semiconductor material by chemical transport reaction using h2s/h2 system | |
| US3406048A (en) | Epitaxial deposition of gallium arsenide from an atmosphere of hydrogen and ga2h6+ascl3+ash3 vapors | |
| US4487640A (en) | Method for the preparation of epitaxial films of mercury cadmium telluride | |
| Lu et al. | Growth of GaSb and GaAsSb in the single phase region by MOVPE | |
| US3179541A (en) | Vapor growth with smooth surfaces by introducing cadmium into the semiconductor material | |
| GB1237952A (Direct) | ||
| US3657004A (en) | Method for producing highly pure gallium arsenide | |
| Cardwell | Vapour phase epitaxy of high purity III–V compounds | |
| Lombos et al. | Thermodynamic equilibrium displacement controlled epitaxial growth of GaAs | |
| US3345223A (en) | Epitaxial deposition of semiconductor materials | |
| GB1037146A (en) | Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |