CA1081586A - Method and apparatus for forming silicon crystalline bodies - Google Patents
Method and apparatus for forming silicon crystalline bodiesInfo
- Publication number
- CA1081586A CA1081586A CA275,389A CA275389A CA1081586A CA 1081586 A CA1081586 A CA 1081586A CA 275389 A CA275389 A CA 275389A CA 1081586 A CA1081586 A CA 1081586A
- Authority
- CA
- Canada
- Prior art keywords
- die
- silicon
- top surface
- ribbon
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000012010 growth Effects 0.000 claims abstract description 27
- 230000005499 meniscus Effects 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012768 molten material Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 9
- 230000009471 action Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000008014 freezing Effects 0.000 description 6
- 238000007710 freezing Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 5
- 239000003607 modifier Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 241001270131 Agaricus moelleri Species 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000036433 growing body Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000021332 multicellular organism growth Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/677,579 US4116641A (en) | 1976-04-16 | 1976-04-16 | Apparatus for pulling crystal ribbons from a truncated wedge shaped die |
| US677,579 | 1991-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1081586A true CA1081586A (en) | 1980-07-15 |
Family
ID=24719300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA275,389A Expired CA1081586A (en) | 1976-04-16 | 1977-03-30 | Method and apparatus for forming silicon crystalline bodies |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4116641A (OSRAM) |
| JP (1) | JPS53971A (OSRAM) |
| CA (1) | CA1081586A (OSRAM) |
| GB (1) | GB1499289A (OSRAM) |
| IT (1) | IT1114775B (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156184A (en) * | 1976-06-22 | 1977-12-26 | Japan Solar Energy | Apparatus for growing crystal ribbons |
| US4304623A (en) * | 1978-07-13 | 1981-12-08 | International Business Machines Corporation | Method for forming silicon crystalline bodies |
| US4239734A (en) * | 1978-07-13 | 1980-12-16 | International Business Machines Corporation | Method and apparatus for forming silicon crystalline bodies |
| US4430305A (en) | 1979-02-12 | 1984-02-07 | Mobil Solar Energy Corporation | Displaced capillary dies |
| US4271129A (en) * | 1979-03-06 | 1981-06-02 | Rca Corporation | Heat radiation deflectors within an EFG crucible |
| US4289571A (en) * | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| US4330359A (en) * | 1981-02-10 | 1982-05-18 | Lovelace Alan M Administrator | Electromigration process for the purification of molten silicon during crystal growth |
| US4390505A (en) * | 1981-03-30 | 1983-06-28 | Mobil Solar Energy Corporation | Crystal growth apparatus |
| US4494300A (en) * | 1981-06-30 | 1985-01-22 | International Business Machines, Inc. | Process for forming transistors using silicon ribbons as substrates |
| US4563558A (en) * | 1983-12-27 | 1986-01-07 | United Technologies Corporation | Directional recrystallization furnace providing convex isotherm temperature distribution |
| US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
| US5248377A (en) * | 1989-12-01 | 1993-09-28 | Grumman Aerospace Corporation | Crystal-growth furnace for interface curvature control |
| US5394825A (en) * | 1992-02-28 | 1995-03-07 | Crystal Systems, Inc. | Method and apparatus for growing shaped crystals |
| DE102006041736A1 (de) | 2006-09-04 | 2008-03-20 | Schott Solar Gmbh | Verfahren und Anordnung zur Herstellung eines Rohres |
| WO2008157313A1 (en) * | 2007-06-14 | 2008-12-24 | Evergreen Solar, Inc. | Ribbon crystal pulling furnace afterheater with at least one opening |
| TWI519684B (zh) * | 2009-09-02 | 2016-02-01 | Ｇｔａｔ股份有限公司 | 在控制壓力下使用氦氣之高溫製程改良 |
| WO2017061360A1 (ja) * | 2015-10-05 | 2017-04-13 | 並木精密宝石株式会社 | サファイア単結晶育成用ダイ及びダイパック、サファイア単結晶育成装置、サファイア単結晶の育成方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3124489A (en) * | 1960-05-02 | 1964-03-10 | Method of continuously growing thin strip crystals | |
| US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| US3915662A (en) * | 1971-05-19 | 1975-10-28 | Tyco Laboratories Inc | Method of growing mono crystalline tubular bodies from the melt |
| US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
| JPS5034165A (OSRAM) * | 1973-07-27 | 1975-04-02 | ||
| US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
| JPS50140263A (OSRAM) * | 1974-04-30 | 1975-11-10 | ||
| JPS50153569A (OSRAM) * | 1974-05-29 | 1975-12-10 |
-
1976
- 1976-04-16 US US05/677,579 patent/US4116641A/en not_active Expired - Lifetime
- 1976-12-10 GB GB51621/76A patent/GB1499289A/en not_active Expired
-
1977
- 1977-03-30 CA CA275,389A patent/CA1081586A/en not_active Expired
- 1977-04-07 IT IT22193/77A patent/IT1114775B/it active
- 1977-04-15 JP JP4275377A patent/JPS53971A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53971A (en) | 1978-01-07 |
| GB1499289A (en) | 1978-01-25 |
| US4116641A (en) | 1978-09-26 |
| JPS5347659B2 (OSRAM) | 1978-12-22 |
| IT1114775B (it) | 1986-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |