CA1075353A - Polychromatic monolithic semiconductor assembly - Google Patents
Polychromatic monolithic semiconductor assemblyInfo
- Publication number
- CA1075353A CA1075353A CA256,461A CA256461A CA1075353A CA 1075353 A CA1075353 A CA 1075353A CA 256461 A CA256461 A CA 256461A CA 1075353 A CA1075353 A CA 1075353A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- assembly
- layers
- substrate
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000003086 colorant Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 230000003416 augmentation Effects 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000905957 Channa melasoma Species 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100508071 Solanum lycopersicum PIIF gene Proteins 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7521402A FR2317774A1 (fr) | 1975-07-08 | 1975-07-08 | Ensemble monolithique semiconducteur polychrome |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1075353A true CA1075353A (en) | 1980-04-08 |
Family
ID=9157662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA256,461A Expired CA1075353A (en) | 1975-07-08 | 1976-07-07 | Polychromatic monolithic semiconductor assembly |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5210090A (OSRAM) |
| CA (1) | CA1075353A (OSRAM) |
| DE (1) | DE2629785C2 (OSRAM) |
| FR (1) | FR2317774A1 (OSRAM) |
| GB (1) | GB1551942A (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53131271A (en) * | 1977-04-05 | 1978-11-15 | Matsushita Electric Ind Co Ltd | Removing method for carbon monoxide |
| US4148045A (en) * | 1977-09-21 | 1979-04-03 | International Business Machines Corporation | Multicolor light emitting diode array |
| US4167016A (en) * | 1977-09-21 | 1979-09-04 | International Business Machines Corporation | Optically isolated monolithic light emitting diode array |
| JPS54123884A (en) * | 1978-03-17 | 1979-09-26 | Hitachi Ltd | Light emission diode of multi-color and its manufacture |
| JPS55124180A (en) * | 1979-03-16 | 1980-09-25 | Sanyo Electric Co | Led display unit and production thereof |
| US4577207A (en) * | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
| CN108105647B (zh) * | 2017-12-20 | 2022-11-04 | 西安智盛锐芯半导体科技有限公司 | 智能led射灯 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611069A (en) * | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
| US3890170A (en) * | 1972-02-29 | 1975-06-17 | Motorola Inc | Method of making a multicolor light display by graded mesaing |
| JPS4945040A (OSRAM) * | 1972-09-08 | 1974-04-27 | ||
| JPS5057592A (OSRAM) * | 1973-09-20 | 1975-05-20 | ||
| US3873979A (en) * | 1973-09-28 | 1975-03-25 | Monsanto Co | Luminescent solid state status indicator |
-
1975
- 1975-07-08 FR FR7521402A patent/FR2317774A1/fr active Granted
-
1976
- 1976-07-02 DE DE2629785A patent/DE2629785C2/de not_active Expired
- 1976-07-05 GB GB27815/76A patent/GB1551942A/en not_active Expired
- 1976-07-07 CA CA256,461A patent/CA1075353A/en not_active Expired
- 1976-07-08 JP JP8044476A patent/JPS5210090A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1551942A (en) | 1979-09-05 |
| FR2317774A1 (fr) | 1977-02-04 |
| DE2629785A1 (de) | 1977-01-27 |
| FR2317774B1 (OSRAM) | 1977-12-16 |
| JPS5210090A (en) | 1977-01-26 |
| DE2629785C2 (de) | 1984-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100268567B1 (ko) | 다중 파장으로 광을 발생시키기 위한 발광 다이오드의 모놀리식 어레이 및 이를 사용한 멀티 컬러 디스플레이 | |
| US4275403A (en) | Electro-luminescent semiconductor device | |
| Craford et al. | Vapor phase epitaxial materials for LED applications | |
| US5646419A (en) | n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same | |
| US4984034A (en) | Non-single-crystalline light emitting semiconductor device matrix with insulation | |
| US4966862A (en) | Method of production of light emitting diodes | |
| DE69315832T2 (de) | Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner Herstellung | |
| US3852798A (en) | Electroluminescent device | |
| US4032944A (en) | Semiconductor device for generating incoherent radiation and method of manufacturing same | |
| US3529217A (en) | Photosensitive semiconductor device | |
| US4955031A (en) | Metal insulator semiconductor heterostructure lasers | |
| CA1075353A (en) | Polychromatic monolithic semiconductor assembly | |
| US4013918A (en) | Electroluminescent diode having threshold effect | |
| US4122486A (en) | Semiconductor light-emitting element | |
| US3267294A (en) | Solid state light emissive diodes having negative resistance characteristics | |
| US4142196A (en) | Polychromatic monolithic semiconductor assembly | |
| US4218692A (en) | Light-emitting and light-receiving diode particularly for optical telecommunications | |
| US4868614A (en) | Light emitting semiconductor device matrix with non-single-crystalline semiconductor | |
| US4010483A (en) | Current confining light emitting diode | |
| US4893154A (en) | Electroluminescent device | |
| US3821616A (en) | Monolithic semiconductor display devices | |
| US5554877A (en) | Compound semiconductor electroluminescent device | |
| US4354140A (en) | Light-emitting semiconductor | |
| US4303931A (en) | Monolithic electroluminescent semiconductor assembly | |
| US5045896A (en) | Solid state light source for emitting light over a broad spectral band |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19970408 |