CA1053380A - Lateral bipolar transistor - Google Patents
Lateral bipolar transistorInfo
- Publication number
- CA1053380A CA1053380A CA261,548A CA261548A CA1053380A CA 1053380 A CA1053380 A CA 1053380A CA 261548 A CA261548 A CA 261548A CA 1053380 A CA1053380 A CA 1053380A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- conductivity type
- zone
- emitter zone
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005036 potential barrier Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002800 charge carrier Substances 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- -1 phosphorus ions Chemical class 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 7
- 230000035515 penetration Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2541907A DE2541907C3 (de) | 1975-09-19 | 1975-09-19 | Verfahren zum Herstellen eines Lateraltransistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1053380A true CA1053380A (en) | 1979-04-24 |
Family
ID=5956946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA261,548A Expired CA1053380A (en) | 1975-09-19 | 1976-09-20 | Lateral bipolar transistor |
Country Status (6)
| Country | Link |
|---|---|
| CA (1) | CA1053380A (enrdf_load_stackoverflow) |
| CH (1) | CH610442A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2541907C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2325198A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1559873A (enrdf_load_stackoverflow) |
| IT (1) | IT1070809B (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
-
1975
- 1975-09-19 DE DE2541907A patent/DE2541907C3/de not_active Expired
-
1976
- 1976-08-02 GB GB32095/76A patent/GB1559873A/en not_active Expired
- 1976-08-23 CH CH1065076A patent/CH610442A5/xx not_active IP Right Cessation
- 1976-09-13 FR FR7627473A patent/FR2325198A1/fr active Granted
- 1976-09-16 IT IT27247/76A patent/IT1070809B/it active
- 1976-09-20 CA CA261,548A patent/CA1053380A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2541907B2 (de) | 1978-03-02 |
| FR2325198A1 (fr) | 1977-04-15 |
| FR2325198B1 (enrdf_load_stackoverflow) | 1979-09-28 |
| DE2541907C3 (de) | 1978-10-26 |
| DE2541907A1 (de) | 1977-03-24 |
| GB1559873A (en) | 1980-01-30 |
| IT1070809B (it) | 1985-04-02 |
| CH610442A5 (en) | 1979-04-12 |
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