CA1041674A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CA1041674A
CA1041674A CA244,899A CA244899A CA1041674A CA 1041674 A CA1041674 A CA 1041674A CA 244899 A CA244899 A CA 244899A CA 1041674 A CA1041674 A CA 1041674A
Authority
CA
Canada
Prior art keywords
region
base region
base
channel
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA244,899A
Other languages
English (en)
French (fr)
Inventor
Willem G. Einthoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1041674A publication Critical patent/CA1041674A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H10W72/90—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA244,899A 1975-02-26 1976-02-03 Semiconductor device Expired CA1041674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/553,151 US3999217A (en) 1975-02-26 1975-02-26 Semiconductor device having parallel path for current flow

Publications (1)

Publication Number Publication Date
CA1041674A true CA1041674A (en) 1978-10-31

Family

ID=24208317

Family Applications (1)

Application Number Title Priority Date Filing Date
CA244,899A Expired CA1041674A (en) 1975-02-26 1976-02-03 Semiconductor device

Country Status (9)

Country Link
US (1) US3999217A (Direct)
JP (1) JPS51109780A (Direct)
BE (1) BE838943A (Direct)
CA (1) CA1041674A (Direct)
DE (1) DE2607202B2 (Direct)
FR (1) FR2302591A1 (Direct)
GB (1) GB1522411A (Direct)
IT (1) IT1050057B (Direct)
SE (1) SE411980B (Direct)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2656420A1 (de) * 1976-12-13 1978-06-15 Siemens Ag Transistor mit innerer gegenkopplung
US4162177A (en) * 1977-03-28 1979-07-24 Solarex Corporation Method of forming solar cell with discontinuous junction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617828A (en) * 1969-09-24 1971-11-02 Gen Electric Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region
US3735358A (en) * 1970-12-31 1973-05-22 Ibm Specialized array logic
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
JPS4827507A (Direct) * 1971-08-18 1973-04-11
JPS5213918B2 (Direct) * 1972-02-02 1977-04-18

Also Published As

Publication number Publication date
DE2607202A1 (de) 1976-09-09
DE2607202B2 (de) 1978-10-12
SE411980B (sv) 1980-02-11
GB1522411A (en) 1978-08-23
JPS51109780A (en) 1976-09-28
SE7600780L (sv) 1976-08-27
FR2302591A1 (fr) 1976-09-24
US3999217A (en) 1976-12-21
IT1050057B (it) 1981-03-10
JPS5526625B2 (Direct) 1980-07-15
BE838943A (fr) 1976-06-16

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