CA1040320A - Depletion isolated semiconductor on insulator structures - Google Patents
Depletion isolated semiconductor on insulator structuresInfo
- Publication number
- CA1040320A CA1040320A CA243,354A CA243354A CA1040320A CA 1040320 A CA1040320 A CA 1040320A CA 243354 A CA243354 A CA 243354A CA 1040320 A CA1040320 A CA 1040320A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- semiconductor
- circuit components
- semiconductor material
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000012212 insulator Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229920000136 polysorbate Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 230000005669 field effect Effects 0.000 abstract description 5
- 239000000306 component Substances 0.000 description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54044375A | 1975-01-13 | 1975-01-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1040320A true CA1040320A (en) | 1978-10-10 |
Family
ID=24155496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA243,354A Expired CA1040320A (en) | 1975-01-13 | 1976-01-12 | Depletion isolated semiconductor on insulator structures |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5346701B2 (en, 2012) |
BE (1) | BE837382A (en, 2012) |
CA (1) | CA1040320A (en, 2012) |
CH (1) | CH598695A5 (en, 2012) |
DE (1) | DE2600221B2 (en, 2012) |
FR (1) | FR2297496A1 (en, 2012) |
GB (1) | GB1509949A (en, 2012) |
IN (1) | IN144889B (en, 2012) |
IT (1) | IT1049016B (en, 2012) |
NL (1) | NL7600259A (en, 2012) |
SE (1) | SE408508B (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4448632A (en) * | 1981-05-25 | 1984-05-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
US7282409B2 (en) * | 2004-06-23 | 2007-10-16 | Micron Technology, Inc. | Isolation structure for a memory cell using Al2O3 dielectric |
JP2011119397A (ja) * | 2009-12-02 | 2011-06-16 | Canon Inc | 半導体装置及びその製造方法 |
-
1975
- 1975-10-10 IN IN1961/CAL/1975A patent/IN144889B/en unknown
- 1975-10-28 GB GB44375/75A patent/GB1509949A/en not_active Expired
- 1975-10-31 IT IT28892/75A patent/IT1049016B/it active
-
1976
- 1976-01-05 DE DE2600221A patent/DE2600221B2/de not_active Withdrawn
- 1976-01-07 CH CH12676A patent/CH598695A5/xx not_active IP Right Cessation
- 1976-01-07 BE BE7000759A patent/BE837382A/xx unknown
- 1976-01-08 SE SE7600122A patent/SE408508B/xx unknown
- 1976-01-12 FR FR7600618A patent/FR2297496A1/fr not_active Withdrawn
- 1976-01-12 NL NL7600259A patent/NL7600259A/xx not_active Application Discontinuation
- 1976-01-12 CA CA243,354A patent/CA1040320A/en not_active Expired
- 1976-01-12 JP JP311276A patent/JPS5346701B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH598695A5 (en, 2012) | 1978-05-12 |
JPS5195785A (en, 2012) | 1976-08-21 |
SE408508B (sv) | 1979-06-11 |
DE2600221A1 (de) | 1976-07-15 |
DE2600221B2 (de) | 1978-09-07 |
BE837382A (nl) | 1976-05-03 |
IT1049016B (it) | 1981-01-20 |
IN144889B (en, 2012) | 1978-07-22 |
JPS5346701B2 (en, 2012) | 1978-12-15 |
SE7600122L (sv) | 1976-07-14 |
GB1509949A (en) | 1978-05-10 |
NL7600259A (nl) | 1976-07-15 |
FR2297496A1 (fr) | 1976-08-06 |
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