CA1031673A - Method of making n-type amorphous semiconductor material - Google Patents
Method of making n-type amorphous semiconductor materialInfo
- Publication number
- CA1031673A CA1031673A CA201,660A CA201660A CA1031673A CA 1031673 A CA1031673 A CA 1031673A CA 201660 A CA201660 A CA 201660A CA 1031673 A CA1031673 A CA 1031673A
- Authority
- CA
- Canada
- Prior art keywords
- making
- semiconductor material
- amorphous semiconductor
- type amorphous
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/263—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/375,794 US3983076A (en) | 1973-07-02 | 1973-07-02 | N-type amorphous semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1031673A true CA1031673A (en) | 1978-05-23 |
Family
ID=23482373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA201,660A Expired CA1031673A (en) | 1973-07-02 | 1974-06-04 | Method of making n-type amorphous semiconductor material |
Country Status (7)
Country | Link |
---|---|
US (1) | US3983076A (it) |
JP (1) | JPS5039467A (it) |
CA (1) | CA1031673A (it) |
DE (1) | DE2429507A1 (it) |
GB (1) | GB1477670A (it) |
IT (1) | IT1025022B (it) |
NL (1) | NL7408935A (it) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846452B2 (ja) * | 1976-02-20 | 1983-10-17 | 株式会社日立製作所 | 撮像管光電変換タ−ゲットの酸化ヤリウム薄膜の蒸着方法 |
JPS585849B2 (ja) * | 1976-02-20 | 1983-02-02 | 株式会社日立製作所 | 酸化セリウム薄膜の蒸着方法 |
JPS5683050A (en) * | 1979-12-12 | 1981-07-07 | Toshiba Corp | Semiconductor device |
JPS57132530U (it) * | 1981-02-10 | 1982-08-18 | ||
JPS57151735U (it) * | 1981-02-10 | 1982-09-24 | ||
BR8601387A (pt) * | 1985-03-29 | 1986-12-02 | Raychem Ltd | Dispositivo para proteger um circuito eletrico,circuito eletrico,componente eletrico e uso de uma composicao amorfa |
EP0242902A3 (en) * | 1986-03-26 | 1988-08-31 | Raychem Limited | Protection device |
GB8621430D0 (en) * | 1986-09-05 | 1987-01-14 | Raychem Ltd | Overvoltage protection device |
GB8623178D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
GB8623177D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
GB8623176D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
JP2790654B2 (ja) * | 1989-04-28 | 1998-08-27 | ホーヤ株式会社 | プラスチックレンズ基板への二酸化チタン膜の形成方法 |
US5356485A (en) * | 1992-04-29 | 1994-10-18 | The United States Of America As Represented By The Secretary Of Commerce | Intermetallic thermocouples |
EP0906563A1 (en) * | 1996-06-17 | 1999-04-07 | Mercury Diagnostics Inc. | Electrochemical test device and related methods |
US6001239A (en) | 1998-09-30 | 1999-12-14 | Mercury Diagnostics, Inc. | Membrane based electrochemical test device and related methods |
GB2380475A (en) * | 2001-10-03 | 2003-04-09 | Qinetiq Ltd | Chalcogenide glass |
GB0124308D0 (en) * | 2001-10-10 | 2001-11-28 | Unilever Plc | Detergent compositions |
US6891749B2 (en) * | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
US7859896B2 (en) * | 2006-02-02 | 2010-12-28 | Renesas Electronics Corporation | Semiconductor device |
US7772120B2 (en) * | 2007-01-09 | 2010-08-10 | International Business Machines Corporation | Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony |
US8039926B2 (en) * | 2007-12-06 | 2011-10-18 | Electronics And Telecommunications Research Institute | Method for manufacturing N-type and P-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same |
US8178906B2 (en) * | 2008-01-11 | 2012-05-15 | Electro Scientific Industries, Inc. | Laser chalcogenide phase change device |
US7693388B1 (en) * | 2008-09-15 | 2010-04-06 | The United States Of America As Represented By The Secretary Of The Navy | Thermally stable IR transmitting chalcogenide glass |
KR20140058208A (ko) * | 2012-11-06 | 2014-05-14 | 삼성전자주식회사 | 이미지 센서 |
DE102014103560A1 (de) | 2013-03-15 | 2014-09-18 | Schott Corporation | Optisches Binden durch die Verwendung von optischem Glas mit niedrigem Erweichungspunkt für optische IR-Anwendungen und gebildete Produkte |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3343972A (en) * | 1964-03-02 | 1967-09-26 | Texas Instruments Inc | Ge-te-as glasses and method of preparation |
US3360649A (en) * | 1965-04-22 | 1967-12-26 | Texas Instruments Inc | Ge-sb-se glass compositions |
US3451794A (en) * | 1966-04-29 | 1969-06-24 | Texas Instruments Inc | Method for melt-casting infrared transmitting glasses |
US3440068A (en) * | 1966-12-21 | 1969-04-22 | Texas Instruments Inc | Amorphous glass compositions |
LU52765A1 (it) * | 1967-01-06 | 1968-08-06 | ||
US3511993A (en) * | 1967-10-18 | 1970-05-12 | Texas Instruments Inc | Ge-se-te glass in an infrared detection system |
US3820968A (en) * | 1970-04-15 | 1974-06-28 | Texas Instruments Inc | Making paths of devitrifiable chalcogenide glasses |
US3771073A (en) * | 1970-07-13 | 1973-11-06 | Bell Telephone Labor Inc | Ultrasonic devices using germanium-containing chalogenide glasses |
US3709813A (en) * | 1971-04-30 | 1973-01-09 | Texas Instruments Inc | Ion-selective electrochemical sensor |
-
1973
- 1973-07-02 US US05/375,794 patent/US3983076A/en not_active Expired - Lifetime
-
1974
- 1974-06-03 GB GB2449674A patent/GB1477670A/en not_active Expired
- 1974-06-04 CA CA201,660A patent/CA1031673A/en not_active Expired
- 1974-06-20 DE DE2429507A patent/DE2429507A1/de not_active Withdrawn
- 1974-06-24 IT IT24350/74A patent/IT1025022B/it active
- 1974-07-02 JP JP49075793A patent/JPS5039467A/ja active Pending
- 1974-07-02 NL NL7408935A patent/NL7408935A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS5039467A (it) | 1975-04-11 |
NL7408935A (nl) | 1975-01-06 |
GB1477670A (en) | 1977-06-22 |
IT1025022B (it) | 1978-08-10 |
DE2429507A1 (de) | 1975-01-23 |
US3983076A (en) | 1976-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1031673A (en) | Method of making n-type amorphous semiconductor material | |
CA1013481A (en) | Stabilized semiconductor devices and method of making same | |
CA1021468A (en) | Method of making isolation grids in bodies of semiconductor material | |
JPS5635427A (en) | Method of manufacturing semiconductor device | |
CA1000872A (en) | Method of manufacturing of junction field effect transistor | |
AU474451B2 (en) | Improvements relating tothe manufacture of semiconductor devices | |
CA1014392A (en) | Method of manufacturing multiple bags | |
CA1002433A (en) | Monocrystals of iii-v semiconductor compounds | |
CA1009765A (en) | Method of manufacturing multi-function lsi wafers | |
CA1007459A (en) | Method of concentrating gallium | |
CA997870A (en) | Semiconductor device and method of manufacturing the device | |
JPS5484567A (en) | Method of manufacturing novel steroids | |
CA990626A (en) | Method of depositing elementary semiconductor material | |
CA1032397A (en) | Method of manufacturing a device | |
CA1016350A (en) | Compositions for soil improvement and process for their production | |
AU476325B2 (en) | Method of making a semiconductor device | |
CA960551A (en) | Method of depositing crystalline semiconductor material | |
AU7460174A (en) | Method of making a semiconductor device | |
CA1029642A (en) | Organic semiconductor material | |
CA1014319A (en) | Method of manufacturing cushion-filling material | |
AU483006B2 (en) | Method of employing encapsulated materials | |
AU478628B2 (en) | Improved method of milking | |
CA1031672A (en) | Process for producing semiconductor devices with uniform junctions | |
CA913809A (en) | Method of depositing elementary semiconductor material | |
AU493710B2 (en) | Production of immunological material |