NL7408935A - Chalkogenide materiaal van het n-type als vast- gesteld door meting van de seebeckcoefficient. - Google Patents

Chalkogenide materiaal van het n-type als vast- gesteld door meting van de seebeckcoefficient.

Info

Publication number
NL7408935A
NL7408935A NL7408935A NL7408935A NL7408935A NL 7408935 A NL7408935 A NL 7408935A NL 7408935 A NL7408935 A NL 7408935A NL 7408935 A NL7408935 A NL 7408935A NL 7408935 A NL7408935 A NL 7408935A
Authority
NL
Netherlands
Prior art keywords
measurement
determined
type
seebeck coefficient
chalkogenide
Prior art date
Application number
NL7408935A
Other languages
English (en)
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of NL7408935A publication Critical patent/NL7408935A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/263—Amorphous materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Glass Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
NL7408935A 1973-07-02 1974-07-02 Chalkogenide materiaal van het n-type als vast- gesteld door meting van de seebeckcoefficient. NL7408935A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/375,794 US3983076A (en) 1973-07-02 1973-07-02 N-type amorphous semiconductor materials

Publications (1)

Publication Number Publication Date
NL7408935A true NL7408935A (nl) 1975-01-06

Family

ID=23482373

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7408935A NL7408935A (nl) 1973-07-02 1974-07-02 Chalkogenide materiaal van het n-type als vast- gesteld door meting van de seebeckcoefficient.

Country Status (7)

Country Link
US (1) US3983076A (nl)
JP (1) JPS5039467A (nl)
CA (1) CA1031673A (nl)
DE (1) DE2429507A1 (nl)
GB (1) GB1477670A (nl)
IT (1) IT1025022B (nl)
NL (1) NL7408935A (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585849B2 (ja) * 1976-02-20 1983-02-02 株式会社日立製作所 酸化セリウム薄膜の蒸着方法
JPS5846452B2 (ja) * 1976-02-20 1983-10-17 株式会社日立製作所 撮像管光電変換タ−ゲットの酸化ヤリウム薄膜の蒸着方法
JPS5683050A (en) * 1979-12-12 1981-07-07 Toshiba Corp Semiconductor device
JPS57132530U (nl) * 1981-02-10 1982-08-18
JPS57151735U (nl) * 1981-02-10 1982-09-24
BR8601387A (pt) * 1985-03-29 1986-12-02 Raychem Ltd Dispositivo para proteger um circuito eletrico,circuito eletrico,componente eletrico e uso de uma composicao amorfa
EP0242902A3 (en) * 1986-03-26 1988-08-31 Raychem Limited Protection device
GB8621430D0 (en) * 1986-09-05 1987-01-14 Raychem Ltd Overvoltage protection device
GB8623177D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
GB8623178D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
GB8623176D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
JP2790654B2 (ja) * 1989-04-28 1998-08-27 ホーヤ株式会社 プラスチックレンズ基板への二酸化チタン膜の形成方法
US5356485A (en) * 1992-04-29 1994-10-18 The United States Of America As Represented By The Secretary Of Commerce Intermetallic thermocouples
WO1997048979A1 (en) * 1996-06-17 1997-12-24 Mercury Diagnostics Inc. Electrochemical test device and related methods
US6001239A (en) 1998-09-30 1999-12-14 Mercury Diagnostics, Inc. Membrane based electrochemical test device and related methods
GB2380475A (en) * 2001-10-03 2003-04-09 Qinetiq Ltd Chalcogenide glass
GB0124308D0 (en) * 2001-10-10 2001-11-28 Unilever Plc Detergent compositions
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US7859896B2 (en) * 2006-02-02 2010-12-28 Renesas Electronics Corporation Semiconductor device
US7772120B2 (en) * 2007-01-09 2010-08-10 International Business Machines Corporation Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony
EP2068368B1 (en) * 2007-12-06 2012-10-10 Electronics and Telecommunications Research Institute Method for manufacturing n-type and p-type chalcogenide thin film transistor
US8178906B2 (en) * 2008-01-11 2012-05-15 Electro Scientific Industries, Inc. Laser chalcogenide phase change device
US7693388B1 (en) * 2008-09-15 2010-04-06 The United States Of America As Represented By The Secretary Of The Navy Thermally stable IR transmitting chalcogenide glass
KR20140058208A (ko) * 2012-11-06 2014-05-14 삼성전자주식회사 이미지 센서
JP6505975B2 (ja) 2013-03-15 2019-04-24 スコット コーポレーションＳｃｈｏｔｔ Ｃｏｒｐｏｒａｔｉｏｎ 赤外光学用の低軟化点光学ガラスを用いたオプティカルボンディング及び形成された製造物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343972A (en) * 1964-03-02 1967-09-26 Texas Instruments Inc Ge-te-as glasses and method of preparation
US3360649A (en) * 1965-04-22 1967-12-26 Texas Instruments Inc Ge-sb-se glass compositions
US3451794A (en) * 1966-04-29 1969-06-24 Texas Instruments Inc Method for melt-casting infrared transmitting glasses
US3440068A (en) * 1966-12-21 1969-04-22 Texas Instruments Inc Amorphous glass compositions
LU52765A1 (nl) * 1967-01-06 1968-08-06
US3511993A (en) * 1967-10-18 1970-05-12 Texas Instruments Inc Ge-se-te glass in an infrared detection system
US3820968A (en) * 1970-04-15 1974-06-28 Texas Instruments Inc Making paths of devitrifiable chalcogenide glasses
US3771073A (en) * 1970-07-13 1973-11-06 Bell Telephone Labor Inc Ultrasonic devices using germanium-containing chalogenide glasses
US3709813A (en) * 1971-04-30 1973-01-09 Texas Instruments Inc Ion-selective electrochemical sensor

Also Published As

Publication number Publication date
US3983076A (en) 1976-09-28
GB1477670A (en) 1977-06-22
JPS5039467A (nl) 1975-04-11
IT1025022B (it) 1978-08-10
CA1031673A (en) 1978-05-23
DE2429507A1 (de) 1975-01-23

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed