CA1020849A - Methode d'oxydation thermique du silicium avec addition de chlore - Google Patents

Methode d'oxydation thermique du silicium avec addition de chlore

Info

Publication number
CA1020849A
CA1020849A CA194,529A CA194529A CA1020849A CA 1020849 A CA1020849 A CA 1020849A CA 194529 A CA194529 A CA 194529A CA 1020849 A CA1020849 A CA 1020849A
Authority
CA
Canada
Prior art keywords
silicon
thermal oxidation
added chlorine
chlorine
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA194,529A
Other languages
English (en)
Other versions
CA194529S (en
Inventor
Konrad Malin
Dietrich Seybold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1020849A publication Critical patent/CA1020849A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
CA194,529A 1973-03-24 1974-03-08 Methode d'oxydation thermique du silicium avec addition de chlore Expired CA1020849A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2314746A DE2314746C2 (de) 1973-03-24 1973-03-24 Verfahren zum thermischen Oxydieren von Silicium unter Zusatz einer Chlorkohlenstoffverbindung

Publications (1)

Publication Number Publication Date
CA1020849A true CA1020849A (fr) 1977-11-15

Family

ID=5875788

Family Applications (1)

Application Number Title Priority Date Filing Date
CA194,529A Expired CA1020849A (fr) 1973-03-24 1974-03-08 Methode d'oxydation thermique du silicium avec addition de chlore

Country Status (6)

Country Link
JP (1) JPS5247305B2 (fr)
CA (1) CA1020849A (fr)
DE (1) DE2314746C2 (fr)
FR (1) FR2222312B1 (fr)
GB (1) GB1447184A (fr)
IT (1) IT1003483B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051377A (en) * 1988-09-01 1991-09-24 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690528A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051377A (en) * 1988-09-01 1991-09-24 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate

Also Published As

Publication number Publication date
GB1447184A (en) 1976-08-25
DE2314746C2 (de) 1983-11-17
JPS5010081A (fr) 1975-02-01
DE2314746A1 (de) 1974-09-26
FR2222312A1 (fr) 1974-10-18
JPS5247305B2 (fr) 1977-12-01
IT1003483B (it) 1976-06-10
FR2222312B1 (fr) 1976-12-03

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