CA1009354A - Semiconductor radiation detector and method of manufacturing same - Google Patents

Semiconductor radiation detector and method of manufacturing same

Info

Publication number
CA1009354A
CA1009354A CA175,884A CA175884A CA1009354A CA 1009354 A CA1009354 A CA 1009354A CA 175884 A CA175884 A CA 175884A CA 1009354 A CA1009354 A CA 1009354A
Authority
CA
Canada
Prior art keywords
radiation detector
manufacturing same
semiconductor radiation
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA175,884A
Other languages
English (en)
Other versions
CA175884S (en
Inventor
Jean L. Digoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1009354A publication Critical patent/CA1009354A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
CA175,884A 1972-07-10 1973-07-06 Semiconductor radiation detector and method of manufacturing same Expired CA1009354A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7224928A FR2192379B1 (fr) 1972-07-10 1972-07-10

Publications (1)

Publication Number Publication Date
CA1009354A true CA1009354A (en) 1977-04-26

Family

ID=9101605

Family Applications (1)

Application Number Title Priority Date Filing Date
CA175,884A Expired CA1009354A (en) 1972-07-10 1973-07-06 Semiconductor radiation detector and method of manufacturing same

Country Status (6)

Country Link
US (1) US3928866A (fr)
JP (1) JPS4946380A (fr)
CA (1) CA1009354A (fr)
DE (1) DE2334417A1 (fr)
FR (1) FR2192379B1 (fr)
GB (1) GB1431715A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990097A (en) * 1975-09-18 1976-11-02 Solarex Corporation Silicon solar energy cell having improved back contact and method forming same
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4485389A (en) * 1978-03-08 1984-11-27 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4328508A (en) * 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
KR100528331B1 (ko) * 2003-02-25 2005-11-16 삼성전자주식회사 수광소자 및 그 제조방법 및 이를 적용한 광전자 집적 회로
KR101148335B1 (ko) * 2009-07-23 2012-05-21 삼성전기주식회사 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀
KR20110068070A (ko) * 2009-12-15 2011-06-22 삼성전기주식회사 실리콘 광전자 증배 소자를 이용한 저조도용 촬영 장치
CN102569487B (zh) * 2012-01-17 2014-05-28 北京大学 硅pin中子剂量探测器及其制作方法
CN102544186B (zh) * 2012-01-17 2014-04-16 北京大学 一种硅pin中子剂量探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
US3742215A (en) * 1970-01-26 1973-06-26 Philips Corp Method and apparatus for a semiconductor radiation detector
DE2103626A1 (de) * 1970-01-26 1971-08-12 Philips Nv Strahlungsdetektor

Also Published As

Publication number Publication date
US3928866A (en) 1975-12-23
FR2192379A1 (fr) 1974-02-08
FR2192379B1 (fr) 1977-07-22
GB1431715A (en) 1976-04-14
JPS4946380A (fr) 1974-05-02
DE2334417A1 (de) 1974-01-24

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