BR8101653A - Processo de producao de transistores que possuem parametros eletricos alterados em relacao aos dos transistores originais - Google Patents

Processo de producao de transistores que possuem parametros eletricos alterados em relacao aos dos transistores originais

Info

Publication number
BR8101653A
BR8101653A BR8101653A BR8101653A BR8101653A BR 8101653 A BR8101653 A BR 8101653A BR 8101653 A BR8101653 A BR 8101653A BR 8101653 A BR8101653 A BR 8101653A BR 8101653 A BR8101653 A BR 8101653A
Authority
BR
Brazil
Prior art keywords
transistors
relation
production
electrical parameters
original
Prior art date
Application number
BR8101653A
Other languages
English (en)
Portuguese (pt)
Inventor
P Hower
R Fiedor
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR8101653A publication Critical patent/BR8101653A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Thyristors (AREA)
BR8101653A 1980-07-24 1981-03-20 Processo de producao de transistores que possuem parametros eletricos alterados em relacao aos dos transistores originais BR8101653A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17178780A 1980-07-24 1980-07-24

Publications (1)

Publication Number Publication Date
BR8101653A true BR8101653A (pt) 1982-08-17

Family

ID=22625139

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8101653A BR8101653A (pt) 1980-07-24 1981-03-20 Processo de producao de transistores que possuem parametros eletricos alterados em relacao aos dos transistores originais

Country Status (7)

Country Link
JP (1) JPS5753978A (fr)
BR (1) BR8101653A (fr)
CA (1) CA1165467A (fr)
DE (1) DE3111598A1 (fr)
FR (1) FR2487575A1 (fr)
GB (1) GB2081009A (fr)
IN (1) IN153170B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670332A5 (fr) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
GB0318146D0 (en) 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Also Published As

Publication number Publication date
FR2487575A1 (fr) 1982-01-29
FR2487575B1 (fr) 1984-06-15
IN153170B (fr) 1984-06-09
JPS5753978A (ja) 1982-03-31
GB2081009A (en) 1982-02-10
CA1165467A (fr) 1984-04-10
DE3111598A1 (de) 1982-03-11

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