BR7500289A - Comutador de potencia transistorizado aperfeicoado grupo de ligacoes ligado ao mesmo e corpo de suporte para o cristal do mesmo - Google Patents

Comutador de potencia transistorizado aperfeicoado grupo de ligacoes ligado ao mesmo e corpo de suporte para o cristal do mesmo

Info

Publication number
BR7500289A
BR7500289A BR289/75A BR7500289A BR7500289A BR 7500289 A BR7500289 A BR 7500289A BR 289/75 A BR289/75 A BR 289/75A BR 7500289 A BR7500289 A BR 7500289A BR 7500289 A BR7500289 A BR 7500289A
Authority
BR
Brazil
Prior art keywords
same
power switch
support body
group connected
connection group
Prior art date
Application number
BR289/75A
Other languages
English (en)
Inventor
G Conzelmann
K Nagel
H Keller
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of BR7500289A publication Critical patent/BR7500289A/pt

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0042Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by the mechanical construction
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
BR289/75A 1974-01-15 1975-01-15 Comutador de potencia transistorizado aperfeicoado grupo de ligacoes ligado ao mesmo e corpo de suporte para o cristal do mesmo BR7500289A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2401701A DE2401701C3 (de) 1974-01-15 1974-01-15 Transistorleistungsschalter

Publications (1)

Publication Number Publication Date
BR7500289A true BR7500289A (pt) 1975-11-04

Family

ID=5904802

Family Applications (1)

Application Number Title Priority Date Filing Date
BR289/75A BR7500289A (pt) 1974-01-15 1975-01-15 Comutador de potencia transistorizado aperfeicoado grupo de ligacoes ligado ao mesmo e corpo de suporte para o cristal do mesmo

Country Status (8)

Country Link
US (1) US4054828A (pt)
JP (1) JPS6035852B2 (pt)
BR (1) BR7500289A (pt)
DE (1) DE2401701C3 (pt)
FR (1) FR2258058B1 (pt)
GB (1) GB1498271A (pt)
IT (1) IT1028351B (pt)
NL (1) NL171765C (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638177C2 (de) * 1976-08-25 1985-10-24 Robert Bosch Gmbh, 7000 Stuttgart Schutzvorrichtung gegen Spannungsumpolung und Überspannungen für eine Halbleiterschaltung
US4242729A (en) * 1978-02-27 1980-12-30 The Bendix Corporation Switching control of solenoid current in fuel injection systems
US4310792A (en) * 1978-06-30 1982-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor voltage regulator
US4298939A (en) * 1978-10-30 1981-11-03 Phillips Petroleum Company Method and apparatus for applying a regulated voltage
JPS5819541U (ja) * 1981-07-31 1983-02-07 日本ビクター株式会社 スイツチング回路
FR2624320B1 (fr) * 1987-12-02 1990-05-18 Equip Electr Moteur Regulateur monolithique de tension de charge de batterie par un alternateur protege contre les tensions parasites
EP0477428A1 (de) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Halbleiterchip mit mindestens einer elektrischen Widerstandseinrichtung
US5268589A (en) * 1990-09-28 1993-12-07 Siemens Aktiengesellschaft Semiconductor chip having at least one electrical resistor means
EP0901058A1 (en) * 1991-10-30 1999-03-10 Harris Corporation Two stage current mirror
US5994755A (en) * 1991-10-30 1999-11-30 Intersil Corporation Analog-to-digital converter and method of fabrication
US5369309A (en) * 1991-10-30 1994-11-29 Harris Corporation Analog-to-digital converter and method of fabrication
DE69522936T2 (de) * 1995-07-31 2002-08-29 St Microelectronics Srl Hochspannungstreiberschaltung für induktive Lasten
JPH10136696A (ja) * 1996-10-29 1998-05-22 Mitsubishi Electric Corp 車両用交流発電機の制御装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3098964A (en) * 1958-08-22 1963-07-23 Gen Motors Corp Transistor regulator for generators
US3479534A (en) * 1966-07-01 1969-11-18 Bell Telephone Labor Inc Pulse stretcher-discriminator whose component electronics exhibit constant power dissipation
DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US3629623A (en) * 1968-11-01 1971-12-21 Nippon Denso Co Composite semiconductor device and semiconductor voltage regulator device for vehicles
US3656028A (en) * 1969-05-12 1972-04-11 Ibm Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon
US3654530A (en) * 1970-06-22 1972-04-04 Ibm Integrated clamping circuit
US3854058A (en) * 1973-09-05 1974-12-10 Airpax Electronics Temperature stable one-shot multi-vibrator

Also Published As

Publication number Publication date
AU7701674A (en) 1976-07-01
NL171765C (nl) 1983-05-02
GB1498271A (en) 1978-01-18
US4054828A (en) 1977-10-18
DE2401701B2 (de) 1976-01-22
NL171765B (nl) 1982-12-01
JPS6035852B2 (ja) 1985-08-16
DE2401701C3 (de) 1978-12-21
IT1028351B (it) 1979-01-30
FR2258058B1 (pt) 1978-07-13
NL7500413A (nl) 1975-07-17
JPS50104562A (pt) 1975-08-18
FR2258058A1 (pt) 1975-08-08
DE2401701A1 (de) 1975-07-17

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