BR112018004941A2 - - Google Patents

Info

Publication number
BR112018004941A2
BR112018004941A2 BR112018004941A BR112018004941A BR112018004941A2 BR 112018004941 A2 BR112018004941 A2 BR 112018004941A2 BR 112018004941 A BR112018004941 A BR 112018004941A BR 112018004941 A BR112018004941 A BR 112018004941A BR 112018004941 A2 BR112018004941 A2 BR 112018004941A2
Authority
BR
Brazil
Application number
BR112018004941A
Other languages
Portuguese (pt)
Other versions
BR112018004941B1 (pt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BR112018004941A2 publication Critical patent/BR112018004941A2/pt
Publication of BR112018004941B1 publication Critical patent/BR112018004941B1/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/06Cavity resonators
    • H01P7/065Cavity resonators integrated in a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1817Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a cavity resonator
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0243Printed circuits associated with mounted high frequency components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/60Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/06Cavity resonators
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203Electrical connections
    • H10W44/216Waveguides, e.g. strip lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/243Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for decoupling, e.g. bypass capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)
BR112018004941-7A 2015-09-14 2016-08-30 Circuito integrado (ic) flip-chip e método para formar um chip de circuito integrado BR112018004941B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/853,802 2015-09-14
US14/853,802 US9443810B1 (en) 2015-09-14 2015-09-14 Flip-chip employing integrated cavity filter, and related components, systems, and methods
PCT/US2016/049440 WO2017048500A1 (en) 2015-09-14 2016-08-30 Flip-chip employing integrated cavity filter, and related components, systems, and methods

Publications (2)

Publication Number Publication Date
BR112018004941A2 true BR112018004941A2 (enExample) 2018-10-02
BR112018004941B1 BR112018004941B1 (pt) 2024-01-16

Family

ID=56881442

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018004941-7A BR112018004941B1 (pt) 2015-09-14 2016-08-30 Circuito integrado (ic) flip-chip e método para formar um chip de circuito integrado

Country Status (11)

Country Link
US (2) US9443810B1 (enExample)
EP (1) EP3350874B1 (enExample)
JP (1) JP6648262B2 (enExample)
KR (1) KR102118558B1 (enExample)
CN (1) CN108028453B (enExample)
BR (1) BR112018004941B1 (enExample)
CA (1) CA2993991A1 (enExample)
ES (1) ES2763034T3 (enExample)
HU (1) HUE046872T2 (enExample)
TW (1) TWI588913B (enExample)
WO (1) WO2017048500A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443810B1 (en) 2015-09-14 2016-09-13 Qualcomm Incorporated Flip-chip employing integrated cavity filter, and related components, systems, and methods
WO2017171807A1 (en) * 2016-03-31 2017-10-05 Intel Corporation Semiconductor package with electromagnetic interference shielding using metal layers and vias
CA3075078C (en) * 2017-09-07 2023-02-14 Amherst College Loop-gap resonators for spin resonance spectroscopy
EP3692476B1 (en) * 2017-10-05 2025-03-26 Google LLC Low footprint resonator in flip chip geometry
CN111226348B (zh) * 2017-10-17 2022-03-11 康普技术有限责任公司 用于具有多层基板的微波和毫米波通信系统的垂直过渡
JP6965732B2 (ja) * 2017-12-26 2021-11-10 Tdk株式会社 バンドパスフィルタ
CN109219299B (zh) * 2018-10-31 2023-08-18 重庆山淞信息技术有限公司 一种多滤波功能的滤波器
CN109768357B (zh) * 2019-02-25 2020-12-08 广东曼克维通信科技有限公司 一种传输零点可控的基片集成波导滤波器
CN114285391B (zh) * 2021-03-23 2025-12-16 偲百创(深圳)科技有限公司 射频滤波器及其制造方法
CN115938408B (zh) 2021-08-26 2025-06-03 株式会社东芝 盘装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130483A (en) 1997-03-05 2000-10-10 Kabushiki Kaisha Toshiba MMIC module using flip-chip mounting
US6297716B1 (en) * 1999-12-16 2001-10-02 Lockheed Martin Corporation Q-switched cavity multiplier
JP2002026611A (ja) * 2000-07-07 2002-01-25 Nec Corp フィルタ
DE10164494B9 (de) * 2001-12-28 2014-08-21 Epcos Ag Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung
DE102004014018B3 (de) 2004-03-19 2005-08-11 Forschungsverbund Berlin E.V. Mikrowellenantenne für in Flip-Chip-Technologie hergestellte Halbleiterbaugruppen
CN102144289B (zh) 2008-09-05 2015-08-05 三菱电机株式会社 高频电路封装件及传感器模块
WO2010139366A1 (en) 2009-06-04 2010-12-09 Telefonaktiebolaget L M Ericsson (Publ) A package resonator cavity
US8301092B2 (en) * 2009-06-09 2012-10-30 Broadcom Corporation Method and system for a low noise amplifier utilizing a leaky wave antenna
KR101077011B1 (ko) * 2009-06-09 2011-10-26 서울대학교산학협력단 미세가공 공동 공진기와 그 제조 방법 및 이를 이용한 대역통과 필터와 발진기
JP5499879B2 (ja) * 2010-04-26 2014-05-21 三菱電機株式会社 高周波フィルタ
US9398694B2 (en) * 2011-01-18 2016-07-19 Sony Corporation Method of manufacturing a package for embedding one or more electronic components
US8749056B2 (en) * 2011-05-26 2014-06-10 Infineon Technologies Ag Module and method of manufacturing a module
CN202120888U (zh) * 2011-06-21 2012-01-18 成都嘉纳海威科技有限责任公司 一种超宽带多功能变频芯片
US8866291B2 (en) 2012-02-10 2014-10-21 Raytheon Company Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs)
US9123983B1 (en) * 2012-07-20 2015-09-01 Hittite Microwave Corporation Tunable bandpass filter integrated circuit
CN203434139U (zh) * 2013-08-16 2014-02-12 深圳华远微电科技有限公司 倒装芯片式滤波器封装结构
US10062494B2 (en) * 2014-11-03 2018-08-28 Qorvo Us, Inc. Apparatus with 3D inductors
US9443810B1 (en) 2015-09-14 2016-09-13 Qualcomm Incorporated Flip-chip employing integrated cavity filter, and related components, systems, and methods

Also Published As

Publication number Publication date
ES2763034T3 (es) 2020-05-26
TWI588913B (zh) 2017-06-21
JP6648262B2 (ja) 2020-02-14
HUE046872T2 (hu) 2020-04-28
EP3350874B1 (en) 2019-09-18
KR20180054703A (ko) 2018-05-24
BR112018004941B1 (pt) 2024-01-16
US9443810B1 (en) 2016-09-13
US20170077574A1 (en) 2017-03-16
US9812752B2 (en) 2017-11-07
CN108028453A (zh) 2018-05-11
WO2017048500A1 (en) 2017-03-23
CA2993991A1 (en) 2017-03-23
EP3350874A1 (en) 2018-07-25
KR102118558B1 (ko) 2020-06-03
CN108028453B (zh) 2019-12-27
JP2018526933A (ja) 2018-09-13
TW201810442A (zh) 2018-03-16

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 30/08/2016, OBSERVADAS AS CONDICOES LEGAIS