BG111329A - Semiconducting three component magnetometer - Google Patents

Abstract

Semiconducting three component magnetometer contains n-type solid-state pad (1) with a rectangular shape, as on its surface there are two oblong ohmic contacts (3 and 4), which are connected through a source of direct current (9). The magnetic field (10) is in any direction relative to the pad (1), and the orthogonal n-pad (1) is surrounded by deep p-ring (2). Along the long sides of the inner zone has four more identical oblong ohmic contacts-first (5), second (6), third (7) and fourth (8), as the first (5) is located on the second (6) and the third (7) against the fourth (8). All ohmic contacts (3, 4, 5, 6, 7 and 8) are symmetrical to the center of the fenced from p-ring (2) inner zone. To measure the first orthogonal components of the magnetic field first (5) and the fourth (8), and accordingly the second (6) and the third (7) contacts are connected to each other, the second one (6) and fourth (8) contact are the output (11) for the first orthogonal components. For the measurement of the second component first orthogonal (5) and third (7), and accordingly the second (6) and fourth (8) contact are interconnected, as the exit (12) for the second component are both points of connection. For the measurement of the third orthogonal components of the magnetic field the four ohmic contacts (5, 6, 7 and 8) are related, such as contacts (3 and 4) are joined in a high ohm trimmer (13), the midpoint of the connecting contacts (5, 6, 7 and 8) are output (14) for the third orthogonal components.

Description

SEMICONDUCTOR THREE-COMPONENT MAGNETOMETER

FIELD OF THE INVENTION

The invention relates to a semiconductor three-component magnetometer applicable in the field of sensorics, systems engineering, robotics and mechatronics, micro- and nano-technologies, including bioengineering, non-contact measurement of angular and linear displacements, positioning of objects in space, contactless automation , energy and energy efficiency, control and measurement technology and low-field magnetometry, military affairs and security, etc.

BACKGROUND OF THE INVENTION

A semiconductor three-component magnetometer is known, which measures the three mutually perpendicular components of the vector of the m / m.

ΤΤΤΛ Q D ηΤ.Γ'Κ TTU Λ _ / То Ά • · · * · ’· · form, on one side of which a longitudinal ohmic base contact is formed on the side of its short spheres - first and second. Near the first basic contact and symmetrically on it is located a p-type emitter. Along the lengths of the long sides of the rectangular p-pad are formed two elongated p-type collectors of equal size - the first and second are on one side, and the third and fourth on the other. The two base contacts are connected through a first current source, the emitter is connected in a forward direction through a second current source relative to the second base contact. The magnetic field has an arbitrary direction with respect to the semiconductor n-type substrate. To measure the first orthogonal component of the magnetic field, the first and fourth, and respectively the second and third p-collectors are connected to each other as the two connection points are connected by one load resistor and through the third current source the collector pairs are connected in the opposite direction to the second. basic contact. The output for the first orthogonal component are the two connection points of the collectors. To measure the second orthogonal component of the ς magnetic field, the first and second, and respectively the third and fourth collectors are connected to each other as the two connection points are connected by one load resistor and through the third current source the collector pairs are connected in the opposite direction to the second base. contact. The output for the second orthogonal component are the two connection points of the collectors. To measure the third orthogonal component of the magnetic field vector, the first and third, and respectively the second and fourth p-collectors are connected to each other as the connection points are connected to one load resistor and through the third current source the collector pairs are connected in the opposite direction. the second base contact. The output for the third orthogonal component are the two connection points of the collectors, [1-3].

The disadvantage of this semiconductor three-component magnetometer is the very complicated construction, which requires three separate current sources and load resistors.

Another disadvantage is the reduced signal-to-noise ratio and the resolution of the individual output channels when measuring the magnetic induction as a result of the increased intrinsic noise from the bipolar transistor action of this magnetometer.

TECHNICAL ESSENCE

It is an object of the invention to provide a semiconductor three-component magnetometer with a simple construction, high resolution and signal-to-noise ratio.

This problem is solved with a semiconductor three-component magnetometer containing a n-type semiconductor substrate, on one side of which a deep rectangular p-ring is formed; on the surface of the inner zone enclosed by this ring and near its short sides there are two elongated ohmic contacts - first and second; along the long sides of ηα ^ ατ, τ., οτη п / лгто nun ΛΤΤΤ6 »цртипи РППЯККИ ппополговати омични contact - against the fourth as all ohmic contacts are symmetrical‘ large ’center’ of the inner zone surrounded by / 2-ring The power contacts are connected * via a DC power source. The magnetic field has an arbitrary direction in space relative to the semiconductor k-type substrate. To measure the first orthogonal component of a magnetic field, the first and fourth and the second and third contacts, respectively, located along the long sides of the inner zone are connected to each other, the second and fourth contacts being the output for the first orthogonal component. To measure the second orthogonal component of the magnetic field, the first and third and the second and fourth contacts, respectively, located along the long sides of the inner zone are interconnected, the output for the second orthogonal component being the two contact points of the contact plugs. To measure the third orthogonal component of the magnetic field vector, the four ohmic contacts located along the long sides of the inner zone are connected as the first and second supply contacts are connected via a high-resistance trimmer, the midpoint of which and the connection point of the four contacts are the output for the third orthogonal component.

An advantage of the invention is the simplified construction due to the failure of two of the three power supplies and the load resistors, and also the total number of contacts is reduced by one.

Another advantage is the increased signal-to-noise ratio and the resolution of the individual output channels when measuring the magnetic induction due to the absence of bipolar transistor action, replaced by the stable and unambiguous as a sensory mechanism of operation Hall effect for all three channels.

Another advantage is the reduced parasitic interchannel influence in the sequential measurement of the magnetic components as a result of the improved structural and electrical symmetry of the magnetometer.

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DESCRIPTION OF THE ATTACHED FIGURES

The invention is illustrated in more detail by one of its exemplary embodiments, given in the attached figures: Figure 1 represents its basic construction and Figure 2 (a), (b) and (c) - the three consecutive connections of the four elongated contacts along the long sides. of the inner rectangular n-type zone of the substrate for sequential measurement of the three orthogonal components of the magnetic field vector.

EXAMPLES OF IMPLEMENTATION

The semiconductor three-component magnetometer comprises a n-type semiconductor substrate 1, on one side of which is formed a LV. In the inner zone and near its short sides there are two longitudinal contacts - first 3 and second 4; along the long sides of the inner zone there are four more identical elongated ohmic contacts - first 5, second 6, third 7 and fourth 8, the first 5 is located opposite the second 6, and the third 7 is against the fourth 8 as all ohmic contacts 3, 4, 5, 6, 7 and 8 are symmetrical in relation to the center of the inner zone enclosed by the /? Ring 2. The supply contacts 3 and 4 are connected via a DC source 9. The magnetic field 10 has an arbitrary direction in space relative to its semiconductor-type substrate 1. To measure the first orthogonal component of the magnetic field, the first 5 and the fourth 8, and the second 6, respectively. and the third 7 contacts are interconnected as the second 6 and fourth 8 contacts are the output I for the first orthogonal component. To measure the second orthogonal component of the magnetic field, the first 5 and third 7, and respectively the second 6 and fourth 8 contacts are connected to each other and the output 12 for the second orthogonal component are the two connection points of the contact pairs 5 and 7, and 6 and 8. To measure the third orthogonal component of the magnetic field vector, the four ohmic contacts 5, 6, 7 and 8 are connected with the first 3 and the second 4 supply contacts connected via a high-resistance trimmer 13, the midpoint of which and the connection point of the four contacts 5, 6, 7 and 8 are the output 14 for the third orthogonal component.

The operation of the semiconductor three-component magnetometer according to the invention, Figure 1, is as follows. When the two contacts 3 and 4 are connected to the source 9, a constant supply current / ₃₄ = const flows between them, the effective trajectory of which is curvilinear. It starts and ends on the low-impedance planar contacts 3 and 4 and in the areas below them the trajectory is initially perpendicular to the upper surface of the substrate 1. The low-impedance supply contacts 3 and 4 are equipotential planes to which in the absence of external magnetic field B 10 current lines / ₃₁₄ are always perpendicular. The effective current trajectory / ₃₁ 4 in the rest of the volume of the "-substrate 1" is parallel to its upper side. An important feature is that the directions of current / _{3; 4} under contacts 3 and 4 are opposite, 7 ₃ = | - / ₄ | = / _{3> 4} . The deep p-ring 2, surrounding the ohmic contacts 3, 4, 5, 6, 7 and 8 close enough, drastically reduces the current flow Z _{3> 4} on the surface of the substrate 1. Given the chosen structural symmetry of all ohmic contacts 3,4, 5 , 6, 7 and 8 with respect to the center of the inner rectangular n-type zone (the point of intersection of the diagonals of this region), the trajectory of the supply current / ₃ , ₄ is also symmetrical with respect to this center in the x-y plane, Figure 1 .

The external magnetic field B 10, which has an arbitrary orientation in space relative to the substrate 1, through its three mutually perpendicular components B _x , B _y and B ₂ leads to the emergence of three laterally deflecting moving electrons / _{3; 4} Lorentz forces, Fl = gVdr x where q is the elementary load of the electron, and V _dr is the vector of the average drift velocity of the carriers along the y-axis [3]. As a result of this Lorentz deflection in the plane, in the surface zones, where contacts 5,6,7 and q ™ ТТЛТТТ.ГГПГТТАТШ14 are located, this is practically the result of the Hall effect, Figure 1.

the three mutually orthogonal components of the magnesium vector add & 8 10 4; B, and B _d as follows: V ^ BJ and | - V ₇ , 1 _'57 (' B,) and | - V ₆ . ₈ (B _y ) |, and The sequential connection of the Travel contacts 5, 6, 7 and 8 in a certain way aims at selective extraction of metrological information for the three separate orthogonal components B _x , B _y and B _z of the magnetic vector B 10.

In field B _x the Lorentz force F _L = gv _{dr> y} x B _x affects the vertical components of the electron drift velocity v _{dr> y} , Figure 1. When joining the four identical contacts 5, 6, 7 and 8 crosswise, Figure 2 (a), a connection is made of contacts whose potentials generated in the magnetic field B _x by the Hall effect have the same sign and are equal in value, VsX ^ x) = I ^ 6,7 (^ χ) In this case the differential output V _{6> 8} (B _X ) 11 between contacts 6 and 8 gives metrological information about the orthogonal magnetic component B _x .

In the field B y the Lorentz force F _L = 6 / v _d r, x x B _x affects the vertical components of the drift velocity v _{dr> x} of the electrons, Figure 1. The parallel connection of contacts 5 and 7, and 6 and 8, respectively connects contacts whose potentials generated in the magnetic field B _y of the Hall effect have the same sign and are equal in value, / 5,7 (^) = V ^ By)], Figure 2 (6).

The differential output V _{5> 8} (By) 12 between contacts 5 and 8 gives metrological information about the orthogonal magnetic component B _y .

Magnetic field B _d acts on the lateral drift velocity v _drA and the vertical component of the velocity v _{dr> y} , Figure 1. Thus the corresponding Lorentz force F _L moves the trajectory / _{3) 4} in the middle region of the substrate 1 in the plane x-y or to its upper surface or to its volume (depending on the directions of current / _{3; 4} and the magnetic field B _z ), i.e. the Lorentz force F _L “shrinks” or “lengthens” the effective current trajectory / _{3) 4} in the x-y plane. The connection of all Hall contacts 5, 6, 7 and 8 performs summation of equal potentials generated by the orthogonal magnetic component B _z , Figure 2 (c). Thus, on all contacts 5, 6, 7 and 8, depending on the direction of the field B _z , both linear and polar (odd) Hall potential ±%, 6,7,8 (^ z) and square and even from the magnetic field are generated. B _z magnetoresistive signal MR ~ B _d . The full compensation of the parasitic, in our case, quadratic magnetic resistance (the quadratic voltage on these Hall contacts 5, 6, 7 and 8 of the magnetic induction B ₇ 10) is carried out by connecting to power contacts 3 and 4 and the current source 9 high-resistance trimmer d 13. Since the supply of the magnetometer is in DC mode T3 _{> 4} = const, the square magnetoresistive voltage Uzd ^ x) ~ B _Ί on the supply contacts 3 and 4 is distributed at the midpoint of the divider (trimmer d 13) according to the values of the resistances the two parts of the trimmer r 13. Thus the potential on the midpoint of the trimmer r 13 coincides with the generated in the field Β _ζ square potential ^ 5,6,7,8 on the directly connected contacts 5, 6, 7 and 8, on which also occurs quadratically voltage from the effect of magnetoresistance, Figure 2 (c). The full compensation of this parasitic quadratic voltage is achieved by resetting the output 14 in the absence of a magnetic field B _z = 0. Then the output 14 remains the linear and polar Hall voltage V5,6,7,8 (B _Z ) ~ Bz, carrier of inboomapia for the third ootogonal magnetic component B ₇ .

An important feature is that each of the three subsequent couplings of the connection of contacts 5, 6, 7 and 8, Figure 2, corresponding to a specific orthogonal magnetic component, suppresses the output voltages from the other two. components of the vector B 10. These signals are in-phase additions in the corresponding differential output and are compensated there.Structural symmetry of the new 3-D magnetometer significantly minimizes the parasitic interchannel influence - one of the main problems of vector magnetometry.The absolute value of the magnetic field vector B 10 is given by the expression: | B | = (B _x ² + Vu ² + BZ ² ) ^1/2 [3],

The unexpected positive effect of the new technical solution lies in the possibility of only six ohmic contacts, the same supply current / _{3 4} (one current source 9) and three different ways of connecting the four contacts 5, 6, 7 and 8, implemented in series, Figure 2 (a), (b) and (c), to extract information about the total magnetic vector B 10. Since the sensor mechanism for converting the magnetic field B 10 into an electric signal is the stable and unambiguous Hall effect, the ratio C signal / noise and the resolution of the new Z-D magnetometer are high. The deep ring 2 minimizes the surface current flow / _{3> 4} and improves the orthogonality of currents 7 ₃ and / ₄ through the two supply contacts 3 and 4 to the upper plane of the substrate 1 in the absence of magnetic field B 10. Thus the current lines / _{3; 4} penetrate deep into the volume of the β-semiconductor substrate 1 and are more effectively acted upon by the lateral Lorentz deflection forces. Therefore, the effect of components B _x and B ₇ on the magnetic field B 10 by Lorentz forces F _L on currents / ₃ and C is significantly increased, and the sensitivity of these channels as well.

The 3-D magnetometer can be implemented with standard CMOS technology or micromachining and can be integrated together with the signal processing peripheral electronics. The sequential implementation of the three connection configurations of contacts 5, 6, 7 and 8, Figure 2 (a), (b) and (c) is performed by a multiplexer.

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APPENDIX, two figures

Claims (1)

PATENT CLAIMS Semiconductor three-component magnetometer containing l-type semiconductor substrate, on its surface there are two elongated ohmic contacts - first and second, which are supply and are connected through a source of direct current as the magnetic field has an arbitrary direction in space relative to the substrate, CHARACTERIZED by the fact that on one side of the n-type pad (1) is formed a deep rectangular p-type ring (2), in its inner zone near the short sides are located the two power contacts (3) and (4), on the length of the long sides of this inner zone has four more identical elongated ohmic contacts - first (5), second (6), third (7) and fourth (8), the first (5) is located opposite the second (6) and the third (7) is ς against the fourth (8) as all ohmic contacts (3), (4), (5), (6), (7) and (8) are symmetrical with respect to the center of the ring-enclosed (2) inner area; for measuring the first orthogonal component of the magnetic field, the first (5) and fourth (8), and respectively the second (6) and third (7) contacts are interconnected as the second (6) and fourth (8) contacts are the output (11). ) for the first orthogonal component; for measuring the second orthogonal component of the magnetic field, the first (5) and third (7), and respectively the second (6) and fourth (8) contacts are connected to each other and the output (12) for the second orthogonal component are the two connection points of the contact pairs (5) and (7), and (6) and (8), respectively; for measuring the third orthogonal component of the magnetic field vector, the four ohmic contacts (5), (6), (7) and (8) are connected as the first (3) and second (4) supply contacts are connected via a high-resistance trimmer (13). ), the midpoint of which and the point of connection of the four contacts (5), (6), (7) and (8) are the output (14) for the third orthogonal component.