BG107638A - Semi-conductor state magnetic sensitive sensor - Google Patents

Abstract

The sensor can be used in instrumentation, in magnetometry, in control systems, in microsystems, in sensor engineering, in contactless automation, in 3-dimensional positioning in space, in instrument engineering, in warfare engineering and in the power energy sector. The sensor functionally integrates two magnetoresistors on a common substrate, wherein the basic shortcomings are being eliminated in a complex manner for that class of magnetosensitive elements - non-linearity, offset and inability to determine the sign of the magnetic field. It comprises a semi-conductor substrate (1), on one of the sides of which four ohmic contacts of rectangular shapes (2, 3, 4, 5) are formed, fitted in parallel to their long sides. The contacts are each connected to a load resistor (6, 7, 8, 9) and current source (10). Two are the output and they are inverted, their transmission characteristics being linear. The sensor can be made by a standard planar silicon technology or by CMOS processes and micromachining. The silicon alternative material is n-GaAs. The sensor has two independent linear and non-even numbered outputs from the magnetic field, it has no initial offset and has simplified manufacturing technology. 1 claim, 1 figure