BE872064A - Circuit logique integre, a vitesse de commutation elevee - Google Patents

Circuit logique integre, a vitesse de commutation elevee

Info

Publication number
BE872064A
BE872064A BE191769A BE191769A BE872064A BE 872064 A BE872064 A BE 872064A BE 191769 A BE191769 A BE 191769A BE 191769 A BE191769 A BE 191769A BE 872064 A BE872064 A BE 872064A
Authority
BE
Belgium
Prior art keywords
logic circuit
switching speed
integrated logic
high switching
integrated
Prior art date
Application number
BE191769A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE872064A publication Critical patent/BE872064A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
BE191769A 1977-11-17 1978-11-16 Circuit logique integre, a vitesse de commutation elevee BE872064A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7712649A NL7712649A (nl) 1977-11-17 1977-11-17 Geientegreerde schakeling.

Publications (1)

Publication Number Publication Date
BE872064A true BE872064A (fr) 1979-05-16

Family

ID=19829556

Family Applications (2)

Application Number Title Priority Date Filing Date
BE191770A BE872065A (fr) 1977-11-17 1978-11-16 Circuit logique integre
BE191769A BE872064A (fr) 1977-11-17 1978-11-16 Circuit logique integre, a vitesse de commutation elevee

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE191770A BE872065A (fr) 1977-11-17 1978-11-16 Circuit logique integre

Country Status (12)

Country Link
US (1) US4595942A (fr)
JP (1) JPS5928058B2 (fr)
BE (2) BE872065A (fr)
BR (1) BR7807508A (fr)
CA (1) CA1129972A (fr)
CH (1) CH638341A5 (fr)
DE (1) DE2848576A1 (fr)
ES (1) ES475104A1 (fr)
FR (1) FR2409600A1 (fr)
GB (1) GB2008317B (fr)
IT (1) IT1100271B (fr)
NL (1) NL7712649A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2947599A1 (de) * 1979-11-26 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierbare halbleiterschaltung
US4656498A (en) * 1980-10-27 1987-04-07 Texas Instruments Incorporated Oxide-isolated integrated Schottky logic
JPS6281120A (ja) * 1985-10-03 1987-04-14 Fujitsu Ltd 半導体装置
FR2589296B1 (fr) * 1985-10-29 1987-11-27 Thomson Csf Circuit de commande en parallele d'un grand nombre de cellules logiques de type stl
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
US6972470B2 (en) * 2004-03-30 2005-12-06 Texas Instruments Incorporated Dual metal Schottky diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
US3617827A (en) * 1970-03-30 1971-11-02 Albert Schmitz Semiconductor device with complementary transistors
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout

Also Published As

Publication number Publication date
GB2008317A (en) 1979-05-31
BR7807508A (pt) 1979-07-31
ES475104A1 (es) 1979-04-16
NL7712649A (nl) 1979-05-21
IT7829767A0 (it) 1978-11-14
GB2008317B (en) 1982-05-06
JPS5478987A (en) 1979-06-23
DE2848576C2 (fr) 1988-08-04
CA1129972A (fr) 1982-08-17
FR2409600A1 (fr) 1979-06-15
IT1100271B (it) 1985-09-28
BE872065A (fr) 1979-05-16
DE2848576A1 (de) 1979-05-23
FR2409600B1 (fr) 1985-04-05
CH638341A5 (de) 1983-09-15
JPS5928058B2 (ja) 1984-07-10
US4595942A (en) 1986-06-17

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: PHILIPS ELECTRONICS N.V.

Effective date: 19971130