BE841352A - Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons - Google Patents
Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutronsInfo
- Publication number
- BE841352A BE841352A BE166632A BE166632A BE841352A BE 841352 A BE841352 A BE 841352A BE 166632 A BE166632 A BE 166632A BE 166632 A BE166632 A BE 166632A BE 841352 A BE841352 A BE 841352A
- Authority
- BE
- Belgium
- Prior art keywords
- neutrons
- homogenous
- phosphorus
- irradiation
- reaction
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752519527 DE2519527C3 (de) | 1975-05-02 | 1975-05-02 | Verfahren zum Herstellen von homogen-phosphordotiertem einkristallinem Silicium durch Neutronenbestrahlung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE841352A true BE841352A (fr) | 1976-08-16 |
Family
ID=5945553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE166632A BE841352A (fr) | 1975-05-02 | 1976-04-30 | Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS598057B2 (de) |
| BE (1) | BE841352A (de) |
| DE (1) | DE2519527C3 (de) |
| DK (1) | DK189276A (de) |
| IT (1) | IT1060268B (de) |
-
1975
- 1975-05-02 DE DE19752519527 patent/DE2519527C3/de not_active Expired
-
1976
- 1976-04-27 DK DK189276A patent/DK189276A/da not_active Application Discontinuation
- 1976-04-27 IT IT2268276A patent/IT1060268B/it active
- 1976-04-30 JP JP4978676A patent/JPS598057B2/ja not_active Expired
- 1976-04-30 BE BE166632A patent/BE841352A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS598057B2 (ja) | 1984-02-22 |
| DE2519527C3 (de) | 1982-05-13 |
| JPS51136281A (en) | 1976-11-25 |
| IT1060268B (it) | 1982-07-10 |
| DE2519527B2 (de) | 1977-05-05 |
| DE2519527A1 (de) | 1976-11-04 |
| DK189276A (da) | 1976-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2306972A1 (fr) | Procede de preparation de dialkylcarbonates | |
| FR2416895A1 (fr) | Procede de production de maytansinoides | |
| FR2334203A1 (fr) | Procede de realisation de dispositifs a semi-conducteur ayant des regions dopees separees par une faible distance reglee avec precision | |
| SE7603197L (sv) | Forfarnde for behandling av biomassa, serskilt svampmycil, for metallretention, genom agglomerering | |
| RO70525A (ro) | Procedeu de preparare a unor bifeniloxi-derivati | |
| RO70581A (ro) | Procedeu de preparare a unor amidoxime | |
| BE844736A (fr) | Procede de preparation de resorcines | |
| CH423772A (fr) | Procédé de préparation de vinylsilanes | |
| FR2309038A1 (fr) | Procede de realisation de transistors par diffusion de matieres de dopage | |
| BE841636A (fr) | Procede de preparation de diphenylamines | |
| BE837231A (fr) | Procede catalytique de production de polyalcools | |
| FR2316974A1 (fr) | Procede de traitement de tumeurs par diathermie | |
| RO66908A (ro) | Procedeu de preparare a unor 9(3-(4-fenilpiperazino)-propil)-adenine | |
| BE841352A (fr) | Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons | |
| BE842735A (fr) | Procede de preparation de para-alkylphenols | |
| OA05404A (fr) | Procédé de préparation de composés pharmocologiquement actifs. | |
| FR2311010A1 (fr) | Procede de preparation de 2-aryl-2h-benzotriazoles | |
| BE847331A (fr) | Procede de preparation de 4-alkyl-thiosemi-carbazides, | |
| FR2321501A1 (fr) | Procede de preparation de composes organiques du phosphore | |
| IT1076807B (it) | Procedimento per produrre composti organici del fosforo contenenti gruppi carbossilici | |
| BE843380A (fr) | Procede de traitement de gaz par absorption | |
| FR2318167A1 (fr) | Procede de purification par distillation des dioxo-2,5-oxa-1-phospholanes-2 | |
| RO72510A (ro) | Procedeu de preparare a unor fenilpirazine | |
| BE824880A (fr) | Procede de preparation de alpha-galactosidase par des micro-organismes | |
| FR2302325A1 (fr) | Procede de teinture des |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: SIEMENS A.G. Effective date: 19850430 |