BE812639A - Traitement d'un semi-conducteur contenant du gallium - Google Patents

Traitement d'un semi-conducteur contenant du gallium

Info

Publication number
BE812639A
BE812639A BE142283A BE142283A BE812639A BE 812639 A BE812639 A BE 812639A BE 142283 A BE142283 A BE 142283A BE 142283 A BE142283 A BE 142283A BE 812639 A BE812639 A BE 812639A
Authority
BE
Belgium
Prior art keywords
treatment
semiconductor containing
containing gallium
gallium
semiconductor
Prior art date
Application number
BE142283A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE812639A publication Critical patent/BE812639A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE142283A 1973-03-26 1974-03-21 Traitement d'un semi-conducteur contenant du gallium BE812639A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US344702A US3890169A (en) 1973-03-26 1973-03-26 Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing

Publications (1)

Publication Number Publication Date
BE812639A true BE812639A (fr) 1974-07-15

Family

ID=23351637

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142283A BE812639A (fr) 1973-03-26 1974-03-21 Traitement d'un semi-conducteur contenant du gallium

Country Status (7)

Country Link
US (1) US3890169A (fr)
JP (1) JPS49130183A (fr)
BE (1) BE812639A (fr)
CA (1) CA1010760A (fr)
DE (1) DE2413792A1 (fr)
GB (1) GB1464137A (fr)
IT (1) IT1048278B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
US4145262A (en) * 1976-02-27 1979-03-20 U.S. Philips Corporation Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method
JPS53105177A (en) * 1977-02-24 1978-09-13 Toshiba Corp Manufacture of semiconductor device
DE2830035C2 (de) * 1977-07-15 1984-05-17 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Verfahren, bei arsenhaltigen Oxidfilmen auf einer Halbleitervorrichtung die Verarmung an Arsen zu verhindern
US4226934A (en) * 1977-08-12 1980-10-07 Ciba-Geigy Ag Light sensitive photographic material containing development inhibitor releasing compounds
US4216036A (en) * 1978-08-28 1980-08-05 Bell Telephone Laboratories, Incorporated Self-terminating thermal oxidation of Al-containing group III-V compound layers
US4226667A (en) * 1978-10-31 1980-10-07 Bell Telephone Laboratories, Incorporated Oxide masking of gallium arsenide
JPS5839374B2 (ja) * 1978-12-26 1983-08-30 松下電器産業株式会社 半導体基板の処理方法
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
JPS6057923A (ja) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶の均質化方法
US4634474A (en) * 1984-10-09 1987-01-06 At&T Bell Laboratories Coating of III-V and II-VI compound semiconductors
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5262360A (en) * 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
US5559058A (en) * 1994-11-15 1996-09-24 Peter S. Zory, Jr. Method for producing native oxides on compound semiconductors
US5736454A (en) * 1997-03-20 1998-04-07 National Science Council Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification
US5958519A (en) * 1997-09-15 1999-09-28 National Science Council Method for forming oxide film on III-V substrate
US6039857A (en) * 1998-11-09 2000-03-21 Yeh; Ching-Fa Method for forming a polyoxide film on doped polysilicon by anodization
US6599564B1 (en) 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
US3531383A (en) * 1966-08-05 1970-09-29 Siemens Ag Method of producing electric capacitors
JPS4915903B1 (fr) * 1969-08-18 1974-04-18
US3687745A (en) * 1971-03-15 1972-08-29 Bell Telephone Labor Inc Light-sensitive storage device including diode array and method for producing the array
BE792614A (fr) * 1971-12-13 1973-03-30 Western Electric Co Procede de realisation d'une couche d'oxyde sur un semi-conducteur

Also Published As

Publication number Publication date
US3890169A (en) 1975-06-17
DE2413792A1 (de) 1974-10-17
GB1464137A (en) 1977-02-09
JPS49130183A (fr) 1974-12-13
CA1010760A (en) 1977-05-24
IT1048278B (it) 1980-11-20

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