BE798760A - Procede de reglage a un diametre constant lors d'une fusion par zones sans creuset avec trois grandeurs de reglage - Google Patents

Procede de reglage a un diametre constant lors d'une fusion par zones sans creuset avec trois grandeurs de reglage

Info

Publication number
BE798760A
BE798760A BE130450A BE130450A BE798760A BE 798760 A BE798760 A BE 798760A BE 130450 A BE130450 A BE 130450A BE 130450 A BE130450 A BE 130450A BE 798760 A BE798760 A BE 798760A
Authority
BE
Belgium
Prior art keywords
adjustment
crucible
zones
melting
constant diameter
Prior art date
Application number
BE130450A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE798760A publication Critical patent/BE798760A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
BE130450A 1972-04-26 1973-04-26 Procede de reglage a un diametre constant lors d'une fusion par zones sans creuset avec trois grandeurs de reglage BE798760A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2220519A DE2220519C3 (de) 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben

Publications (1)

Publication Number Publication Date
BE798760A true BE798760A (fr) 1973-10-26

Family

ID=5843357

Family Applications (1)

Application Number Title Priority Date Filing Date
BE130450A BE798760A (fr) 1972-04-26 1973-04-26 Procede de reglage a un diametre constant lors d'une fusion par zones sans creuset avec trois grandeurs de reglage

Country Status (6)

Country Link
US (1) US3880599A (hu)
JP (1) JPS5910959B2 (hu)
BE (1) BE798760A (hu)
DE (1) DE2220519C3 (hu)
DK (1) DK142062C (hu)
NL (1) NL7216255A (hu)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
DK142586B (da) * 1977-07-07 1980-11-24 Topsil As Apparat til zonesmeltning af en halvlederstav.
JPS58831B2 (ja) * 1978-09-27 1983-01-08 東洋製罐株式会社 高周波誘導加熱回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL135666C (hu) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
DE1209551B (de) * 1961-12-07 1966-01-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines stabfoermigen Halbleiterkoerpers miteiner Steuerung seines Durchmessers- bzw. Querschnittsverlaufs und Vorrichtung zur Durchfuehrung dieses Verfahrens
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE1913881A1 (de) * 1969-03-19 1970-10-22 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
DK142062B (da) 1980-08-18
DK142062C (da) 1981-01-12
DE2220519A1 (de) 1973-11-15
JPS5910959B2 (ja) 1984-03-12
DE2220519B2 (de) 1981-02-26
NL7216255A (hu) 1973-10-30
JPS4922384A (hu) 1974-02-27
US3880599A (en) 1975-04-29
DE2220519C3 (de) 1982-03-11

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19860430