BE780816A - Dispositif a semiconducteur a continuite de conducteurs en filmmetallique - Google Patents

Dispositif a semiconducteur a continuite de conducteurs en filmmetallique

Info

Publication number
BE780816A
BE780816A BE780816A BE780816A BE780816A BE 780816 A BE780816 A BE 780816A BE 780816 A BE780816 A BE 780816A BE 780816 A BE780816 A BE 780816A BE 780816 A BE780816 A BE 780816A
Authority
BE
Belgium
Prior art keywords
semiconductor device
metal film
film conductors
continuous semiconductor
continuous
Prior art date
Application number
BE780816A
Other languages
English (en)
French (fr)
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE780816A publication Critical patent/BE780816A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6334Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
BE780816A 1971-03-17 1972-03-16 Dispositif a semiconducteur a continuite de conducteurs en filmmetallique BE780816A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12530271A 1971-03-17 1971-03-17

Publications (1)

Publication Number Publication Date
BE780816A true BE780816A (fr) 1972-09-18

Family

ID=22419085

Family Applications (1)

Application Number Title Priority Date Filing Date
BE780816A BE780816A (fr) 1971-03-17 1972-03-16 Dispositif a semiconducteur a continuite de conducteurs en filmmetallique

Country Status (13)

Country Link
US (1) US3703667A (https=)
JP (1) JPS5116269B1 (https=)
BE (1) BE780816A (https=)
CA (1) CA972472A (https=)
DD (1) DD95433A5 (https=)
DE (1) DE2213199A1 (https=)
ES (1) ES400633A1 (https=)
FR (1) FR2130125A1 (https=)
GB (1) GB1366559A (https=)
IT (1) IT946134B (https=)
NL (1) NL7203496A (https=)
SE (1) SE374456B (https=)
SU (1) SU456437A3 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112027A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPH0225042U (https=) * 1988-07-29 1990-02-19

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
JPS5144492B2 (https=) * 1971-09-03 1976-11-29

Also Published As

Publication number Publication date
FR2130125A1 (https=) 1972-11-03
SE374456B (https=) 1975-03-03
CA972472A (en) 1975-08-05
US3703667A (en) 1972-11-21
IT946134B (it) 1973-05-21
GB1366559A (en) 1974-09-11
ES400633A1 (es) 1975-01-16
JPS5116269B1 (https=) 1976-05-22
DD95433A5 (https=) 1973-02-05
DE2213199A1 (de) 1972-09-21
NL7203496A (https=) 1972-09-19
SU456437A3 (ru) 1975-01-05

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