BE773097A - PROCESS FOR MANUFACTURING SINGLE CRYSTALS FROM A FUSIBLE SEMICONDUCTOR MATERIAL IN THE FORM OF BARS AND PRODUCTS OBTAINED FROM THESE CRYSTALS - Google Patents

PROCESS FOR MANUFACTURING SINGLE CRYSTALS FROM A FUSIBLE SEMICONDUCTOR MATERIAL IN THE FORM OF BARS AND PRODUCTS OBTAINED FROM THESE CRYSTALS

Info

Publication number
BE773097A
BE773097A BE773097A BE773097A BE773097A BE 773097 A BE773097 A BE 773097A BE 773097 A BE773097 A BE 773097A BE 773097 A BE773097 A BE 773097A BE 773097 A BE773097 A BE 773097A
Authority
BE
Belgium
Prior art keywords
crystals
bars
semiconductor material
products obtained
manufacturing single
Prior art date
Application number
BE773097A
Other languages
French (fr)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE773097A publication Critical patent/BE773097A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE773097A 1970-09-26 1971-09-24 PROCESS FOR MANUFACTURING SINGLE CRYSTALS FROM A FUSIBLE SEMICONDUCTOR MATERIAL IN THE FORM OF BARS AND PRODUCTS OBTAINED FROM THESE CRYSTALS BE773097A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7014206A NL7014206A (en) 1970-09-26 1970-09-26

Publications (1)

Publication Number Publication Date
BE773097A true BE773097A (en) 1972-03-24

Family

ID=19811172

Family Applications (1)

Application Number Title Priority Date Filing Date
BE773097A BE773097A (en) 1970-09-26 1971-09-24 PROCESS FOR MANUFACTURING SINGLE CRYSTALS FROM A FUSIBLE SEMICONDUCTOR MATERIAL IN THE FORM OF BARS AND PRODUCTS OBTAINED FROM THESE CRYSTALS

Country Status (8)

Country Link
AU (1) AU3387371A (en)
BE (1) BE773097A (en)
CA (1) CA954017A (en)
DE (1) DE2147514A1 (en)
FR (1) FR2112983A5 (en)
GB (1) GB1365724A (en)
IT (1) IT939867B (en)
NL (1) NL7014206A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10014650A1 (en) 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Silicon semiconductor wafer used as a substrate wafer is doped with specified concentration of hydrogen
CN103993352A (en) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 Silicon core pulling method for rotating seed crystals
CN103993353B (en) * 2014-04-18 2019-07-23 洛阳金诺机械工程有限公司 A kind of seedholder rotating seed crystal
CN104264220A (en) * 2014-07-02 2015-01-07 洛阳金诺机械工程有限公司 Direct silicon core drawing method using product material
CN111624460B (en) * 2020-06-28 2022-10-21 西安奕斯伟材料科技有限公司 Method for detecting defect distribution area of monocrystalline silicon

Also Published As

Publication number Publication date
FR2112983A5 (en) 1972-06-23
NL7014206A (en) 1972-03-28
GB1365724A (en) 1974-09-04
AU3387371A (en) 1973-03-29
DE2147514A1 (en) 1972-03-30
IT939867B (en) 1973-02-10
CA954017A (en) 1974-09-03

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