BE768761A - Dispositif semi-conducteur comportant au moins deux transistorset procede de fabrication de ce dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur comportant au moins deux transistorset procede de fabrication de ce dispositif semi-conducteur

Info

Publication number
BE768761A
BE768761A BE768761A BE768761A BE768761A BE 768761 A BE768761 A BE 768761A BE 768761 A BE768761 A BE 768761A BE 768761 A BE768761 A BE 768761A BE 768761 A BE768761 A BE 768761A
Authority
BE
Belgium
Prior art keywords
semiconductor device
transistors
manufacturing process
device including
semiconductor
Prior art date
Application number
BE768761A
Other languages
English (en)
French (fr)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE768761A publication Critical patent/BE768761A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086—Emitter coupled logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
BE768761A 1970-06-20 1971-06-18 Dispositif semi-conducteur comportant au moins deux transistorset procede de fabrication de ce dispositif semi-conducteur BE768761A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7009089A NL7009089A (OSRAM) 1970-06-20 1970-06-20
NL7009090A NL7009090A (OSRAM) 1970-06-20 1970-06-20

Publications (1)

Publication Number Publication Date
BE768761A true BE768761A (fr) 1971-12-20

Family

ID=26644553

Family Applications (2)

Application Number Title Priority Date Filing Date
BE768761A BE768761A (fr) 1970-06-20 1971-06-18 Dispositif semi-conducteur comportant au moins deux transistorset procede de fabrication de ce dispositif semi-conducteur
BE768762A BE768762A (fr) 1970-06-20 1971-06-18 Commutateur electronique destine a un circuit

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE768762A BE768762A (fr) 1970-06-20 1971-06-18 Commutateur electronique destine a un circuit

Country Status (7)

Country Link
BE (2) BE768761A (OSRAM)
CA (1) CA965518A (OSRAM)
CH (1) CH531258A (OSRAM)
DE (2) DE2128934C3 (OSRAM)
FR (2) FR2099227A5 (OSRAM)
GB (2) GB1349101A (OSRAM)
NL (2) NL7009090A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559323B1 (fr) * 1984-02-08 1986-06-20 Labo Electronique Physique Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
FR3099849B1 (fr) * 2019-08-09 2021-08-27 St Microelectronics Tours Sas Dispositif de protection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication

Also Published As

Publication number Publication date
BE768762A (fr) 1971-12-20
CA965518A (en) 1975-04-01
FR2095386A1 (OSRAM) 1972-02-11
NL7009090A (OSRAM) 1971-12-22
NL7009089A (OSRAM) 1971-12-22
GB1354527A (en) 1974-06-05
FR2099227A5 (OSRAM) 1972-03-10
DE2128934C3 (de) 1980-02-14
DE2128934A1 (de) 1971-12-30
DE2128920A1 (de) 1971-12-30
CH531258A (de) 1972-11-30
DE2128934B2 (de) 1979-06-13
FR2095386B1 (OSRAM) 1977-04-22
GB1349101A (en) 1974-03-27

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