BE766700A - Procede de profilage d'un corps semi-conducteur par morsure selective - Google Patents

Procede de profilage d'un corps semi-conducteur par morsure selective

Info

Publication number
BE766700A
BE766700A BE766700A BE766700A BE766700A BE 766700 A BE766700 A BE 766700A BE 766700 A BE766700 A BE 766700A BE 766700 A BE766700 A BE 766700A BE 766700 A BE766700 A BE 766700A
Authority
BE
Belgium
Prior art keywords
bitting
profiling
selective
semiconductor body
semiconductor
Prior art date
Application number
BE766700A
Other languages
English (en)
Inventor
W C Erdman
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE766700A publication Critical patent/BE766700A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
BE766700A 1970-05-08 1971-05-04 Procede de profilage d'un corps semi-conducteur par morsure selective BE766700A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3574670A 1970-05-08 1970-05-08

Publications (1)

Publication Number Publication Date
BE766700A true BE766700A (fr) 1971-10-01

Family

ID=21884554

Family Applications (1)

Application Number Title Priority Date Filing Date
BE766700A BE766700A (fr) 1970-05-08 1971-05-04 Procede de profilage d'un corps semi-conducteur par morsure selective

Country Status (5)

Country Link
US (1) US3674580A (fr)
BE (1) BE766700A (fr)
DE (1) DE2121834B2 (fr)
FR (1) FR2088446B1 (fr)
NL (1) NL7106068A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947304A (en) * 1972-08-15 1976-03-30 Bell Telephone Laboratories, Incorporated Etching of group III-V semiconductors
DE3567768D1 (en) * 1984-05-04 1989-02-23 Bbc Brown Boveri & Cie Dry-etching process
US4619894A (en) * 1985-04-12 1986-10-28 Massachusetts Institute Of Technology Solid-transformation thermal resist
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
DE3534418A1 (de) * 1985-09-27 1987-04-02 Telefunken Electronic Gmbh Verfahren zum herstellen von vertiefungen in einem halbleiterbauelemente enthaltenden halbleiterkoerper
US6811610B2 (en) * 2002-06-03 2004-11-02 Diamond Innovations, Inc. Method of making enhanced CVD diamond

Also Published As

Publication number Publication date
NL7106068A (fr) 1971-11-10
US3674580A (en) 1972-07-04
DE2121834A1 (de) 1971-11-11
FR2088446A1 (fr) 1972-01-07
FR2088446B1 (fr) 1974-05-31
DE2121834B2 (de) 1972-12-14

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