BE766652A - INTEGRATED CIRCUIT DEVICE WITH ADDITIONAL FIELD EFFECT TRANSISTORS AND INSULATED OR SIMILAR DOOR - Google Patents
INTEGRATED CIRCUIT DEVICE WITH ADDITIONAL FIELD EFFECT TRANSISTORS AND INSULATED OR SIMILAR DOORInfo
- Publication number
- BE766652A BE766652A BE766652A BE766652A BE766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A
- Authority
- BE
- Belgium
- Prior art keywords
- insulated
- integrated circuit
- field effect
- circuit device
- effect transistors
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3413970A | 1970-05-04 | 1970-05-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE766652A true BE766652A (en) | 1971-10-01 |
Family
ID=21874557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE766652A BE766652A (en) | 1970-05-04 | 1971-05-03 | INTEGRATED CIRCUIT DEVICE WITH ADDITIONAL FIELD EFFECT TRANSISTORS AND INSULATED OR SIMILAR DOOR |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4941469B1 (en) |
| BE (1) | BE766652A (en) |
| DE (1) | DE2120660A1 (en) |
| ES (1) | ES390640A1 (en) |
| FR (1) | FR2096742B1 (en) |
| GB (1) | GB1295395A (en) |
| NL (1) | NL7106007A (en) |
| SE (1) | SE7501442L (en) |
-
1971
- 1971-04-27 DE DE19712120660 patent/DE2120660A1/en active Pending
- 1971-04-27 ES ES390640A patent/ES390640A1/en not_active Expired
- 1971-05-03 NL NL7106007A patent/NL7106007A/xx unknown
- 1971-05-03 BE BE766652A patent/BE766652A/en unknown
- 1971-05-03 GB GB1295395D patent/GB1295395A/en not_active Expired
- 1971-05-03 FR FR7115826A patent/FR2096742B1/fr not_active Expired
-
1973
- 1973-12-11 JP JP48140242A patent/JPS4941469B1/ja active Pending
-
1975
- 1975-02-10 SE SE7501442A patent/SE7501442L/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2096742A1 (en) | 1972-02-25 |
| NL7106007A (en) | 1971-11-08 |
| GB1295395A (en) | 1972-11-08 |
| DE2120660A1 (en) | 1971-11-25 |
| FR2096742B1 (en) | 1976-05-28 |
| SE7501442L (en) | 1975-02-10 |
| ES390640A1 (en) | 1975-08-16 |
| JPS4941469B1 (en) | 1974-11-09 |
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