BE760417A - - Google Patents

Info

Publication number
BE760417A
BE760417A BE760417A BE760417A BE760417A BE 760417 A BE760417 A BE 760417A BE 760417 A BE760417 A BE 760417A BE 760417 A BE760417 A BE 760417A BE 760417 A BE760417 A BE 760417A
Authority
BE
Belgium
Application number
BE760417A
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE760417A publication Critical patent/BE760417A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
BE760417A 1969-12-18 1970-12-16 BE760417A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6172969 1969-12-18

Publications (1)

Publication Number Publication Date
BE760417A true BE760417A (en:Method) 1971-06-16

Family

ID=10487378

Family Applications (1)

Application Number Title Priority Date Filing Date
BE760417A BE760417A (en:Method) 1969-12-18 1970-12-16

Country Status (9)

Country Link
US (1) US3704177A (en:Method)
BE (1) BE760417A (en:Method)
CH (1) CH519790A (en:Method)
DE (1) DE2060348C3 (en:Method)
ES (1) ES386515A1 (en:Method)
FR (1) FR2116324B1 (en:Method)
GB (1) GB1324507A (en:Method)
NL (1) NL7018159A (en:Method)
SE (1) SE355895B (en:Method)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226433B2 (en:Method) * 1971-09-18 1977-07-14
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
FR2241875B1 (en:Method) * 1973-08-21 1977-09-09 Radiotechnique Compelec
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
US4337475A (en) * 1979-06-15 1982-06-29 Gold Star Semiconductor, Ltd. High power transistor with highly doped buried base layer
FR2480503A1 (fr) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc Transistor de commutation pour forte puissance
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
US3704177A (en) 1972-11-28
DE2060348A1 (de) 1971-06-24
SE355895B (en:Method) 1973-05-07
DE2060348B2 (de) 1977-10-06
CH519790A (de) 1972-02-29
FR2116324A1 (en:Method) 1972-07-13
FR2116324B1 (en:Method) 1976-09-03
ES386515A1 (es) 1973-11-16
DE2060348C3 (de) 1978-05-24
NL7018159A (en:Method) 1971-06-22
GB1324507A (en) 1973-07-25

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