BE760009A - Oscillateur a haute frequence - Google Patents

Oscillateur a haute frequence

Info

Publication number
BE760009A
BE760009A BE760009DA BE760009A BE 760009 A BE760009 A BE 760009A BE 760009D A BE760009D A BE 760009DA BE 760009 A BE760009 A BE 760009A
Authority
BE
Belgium
Prior art keywords
high frequency
frequency oscillator
oscillator
frequency
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
B C De Loach
R Edwards
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE760009A publication Critical patent/BE760009A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Junction Field-Effect Transistors (AREA)
BE760009D 1969-12-10 Oscillateur a haute frequence BE760009A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88389869A 1969-12-10 1969-12-10

Publications (1)

Publication Number Publication Date
BE760009A true BE760009A (fr) 1971-05-17

Family

ID=25383558

Family Applications (1)

Application Number Title Priority Date Filing Date
BE760009D BE760009A (fr) 1969-12-10 Oscillateur a haute frequence

Country Status (11)

Country Link
US (1) US3628187A (de)
JP (1) JPS4910195B1 (de)
BE (1) BE760009A (de)
CH (1) CH519266A (de)
DE (1) DE2059445C2 (de)
ES (1) ES386673A1 (de)
FR (1) FR2077549B1 (de)
GB (1) GB1312837A (de)
IE (1) IE34726B1 (de)
NL (1) NL170354C (de)
SE (1) SE356184B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829880A (en) * 1973-01-05 1974-08-13 Westinghouse Electric Corp Schottky barrier plasma thyristor circuit
US3965437A (en) * 1973-05-16 1976-06-22 Raytheon Company Avalanche semiconductor amplifier
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
WO2005119793A2 (en) * 2004-05-28 2005-12-15 Caracal, Inc. Silicon carbide schottky diodes and fabrication method
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US20080253167A1 (en) * 2007-04-16 2008-10-16 Ralf Symanczyk Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899652A (en) * 1959-08-11 Distance
NL276911A (de) * 1962-04-06
US3519999A (en) * 1964-11-20 1970-07-07 Ibm Thin polymeric film memory device
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device

Also Published As

Publication number Publication date
NL170354C (nl) 1982-10-18
SE356184B (de) 1973-05-14
NL7017762A (de) 1971-06-14
NL170354B (nl) 1982-05-17
DE2059445C2 (de) 1983-09-01
IE34726L (en) 1971-06-10
US3628187A (en) 1971-12-14
FR2077549A1 (de) 1971-10-29
FR2077549B1 (de) 1974-04-26
DE2059445A1 (de) 1971-06-16
JPS4910195B1 (de) 1974-03-08
ES386673A1 (es) 1973-03-16
GB1312837A (en) 1973-04-11
IE34726B1 (en) 1975-07-23
CH519266A (de) 1972-02-15

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19901208