BE755189A - Agencement de memoire a courant continu - Google Patents

Agencement de memoire a courant continu

Info

Publication number
BE755189A
BE755189A BE755189DA BE755189A BE 755189 A BE755189 A BE 755189A BE 755189D A BE755189D A BE 755189DA BE 755189 A BE755189 A BE 755189A
Authority
BE
Belgium
Prior art keywords
continuous current
current memory
memory arrangement
arrangement
continuous
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
J A Reed
Original Assignee
Shell Int Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE755189A publication Critical patent/BE755189A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
BE755189D 1969-08-25 Agencement de memoire a courant continu BE755189A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85265769A 1969-08-25 1969-08-25

Publications (1)

Publication Number Publication Date
BE755189A true BE755189A (fr) 1971-02-24

Family

ID=25313907

Family Applications (1)

Application Number Title Priority Date Filing Date
BE755189D BE755189A (fr) 1969-08-25 Agencement de memoire a courant continu

Country Status (5)

Country Link
US (1) US3550097A (cs)
BE (1) BE755189A (cs)
DE (1) DE2041959A1 (cs)
FR (1) FR2059664A1 (cs)
NL (1) NL7012521A (cs)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3764825A (en) * 1972-01-10 1973-10-09 R Stewart Active element memory
US3753011A (en) * 1972-03-13 1973-08-14 Intel Corp Power supply settable bi-stable circuit
US3836892A (en) * 1972-06-29 1974-09-17 Ibm D.c. stable electronic storage utilizing a.c. stable storage cell
US3757313A (en) * 1972-06-29 1973-09-04 Ibm Data storage with predetermined settable configuration
US3949383A (en) * 1974-12-23 1976-04-06 Ibm Corporation D. C. Stable semiconductor memory cell
US3969708A (en) * 1975-06-30 1976-07-13 International Business Machines Corporation Static four device memory cell
US4161663A (en) * 1978-03-10 1979-07-17 Rockwell International Corporation High voltage CMOS level shifter
US4349894A (en) * 1978-07-19 1982-09-14 Texas Instruments Incorporated Semiconductor memory cell with synthesized load resistors
US4236229A (en) * 1978-07-19 1980-11-25 Texas Instruments Incorporated Semiconductor memory cell with synthesized load resistors
US4209851A (en) * 1978-07-19 1980-06-24 Texas Instruments Incorporated Semiconductor memory cell with clocked voltage supply from data lines
US4334293A (en) * 1978-07-19 1982-06-08 Texas Instruments Incorporated Semiconductor memory cell with clocked voltage supply from data lines
US4316264A (en) * 1980-01-08 1982-02-16 Eliyahou Harari Uniquely accessed RAM
EP0040436B1 (en) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447137A (en) * 1965-05-13 1969-05-27 Bunker Ramo Digital memory apparatus
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors

Also Published As

Publication number Publication date
US3550097A (en) 1970-12-22
NL7012521A (cs) 1971-03-01
DE2041959A1 (de) 1971-04-01
FR2059664A1 (cs) 1971-06-04

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