BE747682A - Thyristor dote de caracteristiques ameliorees de traitement du courant et de la tension - Google Patents

Thyristor dote de caracteristiques ameliorees de traitement du courant et de la tension

Info

Publication number
BE747682A
BE747682A BE747682A BE747682A BE747682A BE 747682 A BE747682 A BE 747682A BE 747682 A BE747682 A BE 747682A BE 747682 A BE747682 A BE 747682A BE 747682 A BE747682 A BE 747682A
Authority
BE
Belgium
Prior art keywords
thyristor
handling characteristics
improved current
voltage handling
voltage
Prior art date
Application number
BE747682A
Other languages
English (en)
French (fr)
Inventor
R L Davies
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BE747682A publication Critical patent/BE747682A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
BE747682A 1969-03-21 1970-03-20 Thyristor dote de caracteristiques ameliorees de traitement du courant et de la tension BE747682A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80914269A 1969-03-21 1969-03-21

Publications (1)

Publication Number Publication Date
BE747682A true BE747682A (fr) 1970-09-21

Family

ID=25200639

Family Applications (1)

Application Number Title Priority Date Filing Date
BE747682A BE747682A (fr) 1969-03-21 1970-03-20 Thyristor dote de caracteristiques ameliorees de traitement du courant et de la tension

Country Status (9)

Country Link
US (1) US3579060A (de)
JP (1) JPS4916238B1 (de)
BE (1) BE747682A (de)
BR (1) BR7017620D0 (de)
DE (2) DE2013742C2 (de)
FR (1) FR2041091B1 (de)
GB (1) GB1301192A (de)
IE (1) IE33733B1 (de)
SE (1) SE364597B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501990B1 (de) * 1970-06-02 1975-01-22
CH526859A (de) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistabiles Halbleiterbauelement
BE787241A (fr) * 1971-08-06 1973-02-05 Siemens Ag Thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
GB1410726A (en) * 1972-01-24 1975-10-22 Licentia Gmbh Thyristor with increased switching on an switching through speed
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS50123282A (de) * 1974-03-15 1975-09-27
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
US4042947A (en) * 1976-01-06 1977-08-16 Westinghouse Electric Corporation High voltage transistor with high gain
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPS5739574A (en) * 1980-08-22 1982-03-04 Toshiba Corp Semiconductor device
JPS5921062A (ja) * 1982-07-26 1984-02-02 Mitsubishi Electric Corp サイリスタ
US4577210A (en) * 1982-08-12 1986-03-18 International Rectifier Corporation Controlled rectifier having ring gate with internal protrusion for dV/dt control
DE3316964A1 (de) * 1983-05-09 1984-11-15 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit vergossenem becher
JPS60177674A (ja) * 1984-02-23 1985-09-11 Mitsubishi Electric Corp 圧接形半導体装置の插入電極板の固定方法
DE3917100A1 (de) * 1989-05-26 1990-11-29 Eupec Gmbh & Co Kg Thyristor
US5736755A (en) * 1992-11-09 1998-04-07 Delco Electronics Corporation Vertical PNP power device with different ballastic resistant vertical PNP transistors
US6673220B2 (en) * 2001-05-21 2004-01-06 Sharp Laboratories Of America, Inc. System and method for fabricating silicon targets

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
FR1317754A (de) * 1961-03-17 1963-05-08
FR91476E (fr) * 1963-08-03 1968-06-21 Siemens Ag Elément redresseur commandé comportant un semiconducteur en principe monocristallin avec une succession de couches pn-pn
FR1406185A (fr) * 1963-08-07 1965-07-16 Philips Nv Redresseur commandé et son procédé de fabrication
NL296392A (de) * 1963-08-07
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
FR1530863A (fr) * 1966-07-07 1968-06-28 Asea Ab Empilage de semi-conducteurs se prêtant à la commande
FR1541894A (fr) * 1966-10-25 1968-10-11 Asea Ab Dispositif à semi-conducteurs
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction

Also Published As

Publication number Publication date
US3579060A (en) 1971-05-18
FR2041091B1 (de) 1974-03-15
JPS4916238B1 (de) 1974-04-20
IE33733B1 (en) 1974-10-16
IE33733L (en) 1970-09-21
FR2041091A1 (de) 1971-01-29
DE2013742C2 (de) 1982-07-01
SE364597B (de) 1974-02-25
GB1301192A (en) 1972-12-29
DE2013742A1 (de) 1970-10-15
DE7010576U (de) 1972-07-06
BR7017620D0 (pt) 1973-04-17

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: GENERAL ELECTRIC CY

Effective date: 19870331