BE743828A - - Google Patents

Info

Publication number
BE743828A
BE743828A BE743828DA BE743828A BE 743828 A BE743828 A BE 743828A BE 743828D A BE743828D A BE 743828DA BE 743828 A BE743828 A BE 743828A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE743828A publication Critical patent/BE743828A/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE743828D 1968-12-31 1969-12-29 BE743828A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR182980 1968-12-31

Publications (1)

Publication Number Publication Date
BE743828A true BE743828A (en:Method) 1970-06-29

Family

ID=8659864

Family Applications (1)

Application Number Title Priority Date Filing Date
BE743828D BE743828A (en:Method) 1968-12-31 1969-12-29

Country Status (6)

Country Link
JP (1) JPS4915988B1 (en:Method)
BE (1) BE743828A (en:Method)
DE (1) DE2000096C3 (en:Method)
FR (1) FR1600341A (en:Method)
GB (1) GB1299610A (en:Method)
NL (1) NL159813B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2163075C2 (de) * 1970-12-23 1982-03-04 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zur Herstellung von elektrolumineszierenden Halbleiterbauelementen
JPS5342230B2 (en:Method) * 1972-10-19 1978-11-09
JPS49102652U (en:Method) * 1972-12-22 1974-09-04
JPS5056873A (en:Method) * 1973-09-14 1975-05-17
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie

Also Published As

Publication number Publication date
GB1299610A (en) 1972-12-13
NL159813B (nl) 1979-03-15
NL6919464A (en:Method) 1970-07-02
DE2000096A1 (de) 1970-07-23
DE2000096C3 (de) 1978-05-18
JPS4915988B1 (en:Method) 1974-04-18
FR1600341A (en:Method) 1970-07-20
DE2000096B2 (de) 1977-09-15

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: N.V. PHILIPS'GLOEILAMPENFABRIEKEN

Effective date: 19881231