BE739921A - - Google Patents

Info

Publication number
BE739921A
BE739921A BE739921DA BE739921A BE 739921 A BE739921 A BE 739921A BE 739921D A BE739921D A BE 739921DA BE 739921 A BE739921 A BE 739921A
Authority
BE
Belgium
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE739921A publication Critical patent/BE739921A/xx
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
BE739921D 1968-10-08 1969-10-07 Expired BE739921A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US04/765,795 US3997883A (en) 1968-10-08 1968-10-08 LSI random access memory system

Publications (1)

Publication Number Publication Date
BE739921A true BE739921A (ja) 1970-03-16

Family

ID=25074507

Family Applications (1)

Application Number Title Priority Date Filing Date
BE739921D Expired BE739921A (ja) 1968-10-08 1969-10-07

Country Status (10)

Country Link
US (1) US3997883A (ja)
JP (1) JPS4944062B1 (ja)
BE (1) BE739921A (ja)
CA (1) CA928424A (ja)
CH (1) CH504075A (ja)
DE (1) DE1950695C3 (ja)
FR (2) FR2020114B1 (ja)
GB (1) GB1244683A (ja)
NL (1) NL171753C (ja)
SE (2) SE375640B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713114A (en) * 1969-12-18 1973-01-23 Ibm Data regeneration scheme for stored charge storage cell
GB1316450A (en) * 1969-12-18 1973-05-09 Ibm Data stores
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US7400522B2 (en) * 2003-03-18 2008-07-15 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
US7606059B2 (en) 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US7394680B2 (en) * 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
US7778062B2 (en) * 2003-03-18 2010-08-17 Kabushiki Kaisha Toshiba Resistance change memory device
US7692951B2 (en) * 2007-06-12 2010-04-06 Kabushiki Kaisha Toshiba Resistance change memory device with a variable resistance element formed of a first and a second composite compound

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE534199A (ja) * 1953-12-18
US2771575A (en) * 1954-01-22 1956-11-20 Marchant Calculators Inc Diode capacitor regenerator
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3541530A (en) * 1968-01-15 1970-11-17 Ibm Pulsed power four device memory cell

Also Published As

Publication number Publication date
US3997883A (en) 1976-12-14
SE375640B (ja) 1975-04-21
CA928424A (en) 1973-06-12
FR2020114A1 (ja) 1970-07-10
GB1244683A (en) 1971-09-02
DE1950695C3 (de) 1975-07-10
FR2123560A1 (ja) 1972-09-08
FR2123560B1 (ja) 1978-03-24
NL171753B (nl) 1982-12-01
FR2020114B1 (ja) 1977-12-02
SE366416B (ja) 1974-04-22
DE1950695A1 (de) 1970-05-21
NL6915234A (ja) 1970-04-10
CH504075A (fr) 1971-02-28
DE1950695B2 (de) 1974-06-20
NL171753C (nl) 1983-05-02
JPS4944062B1 (ja) 1974-11-26

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: THE NATIONAL CASH REGISTER CY

Effective date: 19841007