BE739921A - - Google Patents

Info

Publication number
BE739921A
BE739921A BE739921DA BE739921A BE 739921 A BE739921 A BE 739921A BE 739921D A BE739921D A BE 739921DA BE 739921 A BE739921 A BE 739921A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE739921A publication Critical patent/BE739921A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Shift Register Type Memory (AREA)
BE739921D 1968-10-08 1969-10-07 BE739921A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US04/765,795 US3997883A (en) 1968-10-08 1968-10-08 LSI random access memory system

Publications (1)

Publication Number Publication Date
BE739921A true BE739921A (en:Method) 1970-03-16

Family

ID=25074507

Family Applications (1)

Application Number Title Priority Date Filing Date
BE739921D BE739921A (en:Method) 1968-10-08 1969-10-07

Country Status (10)

Country Link
US (1) US3997883A (en:Method)
JP (1) JPS4944062B1 (en:Method)
BE (1) BE739921A (en:Method)
CA (1) CA928424A (en:Method)
CH (1) CH504075A (en:Method)
DE (1) DE1950695C3 (en:Method)
FR (2) FR2020114B1 (en:Method)
GB (1) GB1244683A (en:Method)
NL (1) NL171753C (en:Method)
SE (2) SE366416B (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713114A (en) * 1969-12-18 1973-01-23 Ibm Data regeneration scheme for stored charge storage cell
GB1316450A (en) * 1969-12-18 1973-05-09 Ibm Data stores
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US7394680B2 (en) * 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
JP4377817B2 (ja) 2003-03-18 2009-12-02 株式会社東芝 プログラマブル抵抗メモリ装置
US7778062B2 (en) * 2003-03-18 2010-08-17 Kabushiki Kaisha Toshiba Resistance change memory device
US7400522B2 (en) * 2003-03-18 2008-07-15 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
US7692951B2 (en) * 2007-06-12 2010-04-06 Kabushiki Kaisha Toshiba Resistance change memory device with a variable resistance element formed of a first and a second composite compound

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1069405B (de) * 1953-12-18 1959-11-19 IBM Deutschland Internationale Büro-Maschinen Gesellschaft m.b.H., Sindelfingen (Württ.) Anordnung zum Speichern mit Kondensatoren
US2771575A (en) * 1954-01-22 1956-11-20 Marchant Calculators Inc Diode capacitor regenerator
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3541530A (en) * 1968-01-15 1970-11-17 Ibm Pulsed power four device memory cell

Also Published As

Publication number Publication date
SE375640B (en:Method) 1975-04-21
JPS4944062B1 (en:Method) 1974-11-26
DE1950695B2 (de) 1974-06-20
GB1244683A (en) 1971-09-02
NL171753B (nl) 1982-12-01
FR2020114B1 (en:Method) 1977-12-02
FR2123560B1 (en:Method) 1978-03-24
CH504075A (fr) 1971-02-28
DE1950695C3 (de) 1975-07-10
SE366416B (en:Method) 1974-04-22
FR2123560A1 (en:Method) 1972-09-08
NL6915234A (en:Method) 1970-04-10
NL171753C (nl) 1983-05-02
FR2020114A1 (en:Method) 1970-07-10
DE1950695A1 (de) 1970-05-21
US3997883A (en) 1976-12-14
CA928424A (en) 1973-06-12

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: THE NATIONAL CASH REGISTER CY

Effective date: 19841007