BE715161A - - Google Patents

Info

Publication number
BE715161A
BE715161A BE715161DA BE715161A BE 715161 A BE715161 A BE 715161A BE 715161D A BE715161D A BE 715161DA BE 715161 A BE715161 A BE 715161A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE715161A publication Critical patent/BE715161A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
BE715161D 1967-05-19 1968-05-15 BE715161A (instruction)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63990267A 1967-05-19 1967-05-19

Publications (1)

Publication Number Publication Date
BE715161A true BE715161A (instruction) 1968-09-30

Family

ID=24566045

Family Applications (1)

Application Number Title Priority Date Filing Date
BE715161D BE715161A (instruction) 1967-05-19 1968-05-15

Country Status (3)

Country Link
US (1) US3483110A (instruction)
BE (1) BE715161A (instruction)
FR (1) FR1565917A (instruction)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3620715A (en) * 1969-07-24 1971-11-16 Us Interior Steel scrap oxidation acceleration by surface impregnation techniques
US3660155A (en) * 1970-04-15 1972-05-02 Us Navy Method for preparing solid films
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3688160A (en) * 1971-03-25 1972-08-29 Matsushita Electric Ind Co Ltd Thin film non-rectifying negative resistance device
US3886578A (en) * 1973-02-26 1975-05-27 Multi State Devices Ltd Low ohmic resistance platinum contacts for vanadium oxide thin film devices
US3899407A (en) * 1973-08-01 1975-08-12 Multi State Devices Ltd Method of producing thin film devices of doped vanadium oxide material
US3916432A (en) * 1974-05-17 1975-10-28 Us Energy Superconductive microstrip exhibiting negative differential resistivity
US4315905A (en) * 1980-06-30 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Process for producing an electronically conductive oxidizer material
US4401690A (en) * 1982-02-01 1983-08-30 Ppg Industries, Inc. Thermochromic vanadium oxide with depressed switching temperature
US4393095A (en) * 1982-02-01 1983-07-12 Ppg Industries, Inc. Chemical vapor deposition of vanadium oxide coatings
US4400412A (en) * 1982-02-01 1983-08-23 Ppg Industries, Inc. Thermochromic vanadium oxide coated glass
AU546405B2 (en) 1982-02-01 1985-08-29 Ppg Industries, Inc. Vanadium oxide coating
US5274241A (en) * 1990-07-19 1993-12-28 Westinghouse Electric Corp. Optical and electromagnetic field
EP0577667B1 (en) * 1991-03-25 1998-07-22 Commonwealth Scientific And Industrial Research Organisation Arc source macroparticle filter
US5330855A (en) * 1991-09-23 1994-07-19 The United States Of America, As Represented By The Secretary Of Commerce Planar epitaxial films of SnO2
US5419890A (en) * 1994-01-19 1995-05-30 Valence Technology, Inc. Use of organic solvents in the synthesis of V6 O13+x [0<x≦2]
US5482697A (en) * 1994-01-19 1996-01-09 Valence Technology, Inc. Method of making V6 O13+x [0<X≦2.0]
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US6225007B1 (en) 1999-02-05 2001-05-01 Nanogram Corporation Medal vanadium oxide particles
US6106798A (en) * 1997-07-21 2000-08-22 Nanogram Corporation Vanadium oxide nanoparticles
WO1999004441A1 (en) * 1997-07-21 1999-01-28 Nanogram Corporation Vanadium oxide particles and batteries with electroactive nanoparticles
US6391494B2 (en) 1999-05-13 2002-05-21 Nanogram Corporation Metal vanadium oxide particles
US5952125A (en) * 1997-07-21 1999-09-14 Nanogram Corporation Batteries with electroactive nanoparticles
US5989514A (en) * 1997-07-21 1999-11-23 Nanogram Corporation Processing of vanadium oxide particles with heat
US7214446B1 (en) 1997-07-21 2007-05-08 Nanogram Corporation Batteries with electroactive nanoparticles
US6503646B1 (en) 2000-08-28 2003-01-07 Nanogram Corporation High rate batteries
FR2809388B1 (fr) * 2000-05-23 2002-12-20 Saint Gobain Vitrage Vitrage comprenant au moins une couche a proprietes thermochromes
WO2004010520A1 (en) * 2002-07-22 2004-01-29 Nanogram Corporation High capacity and high rate batteries
DE10342398B4 (de) * 2003-09-13 2008-05-29 Schott Ag Schutzschicht für einen Körper sowie Verfahren zur Herstellung und Verwendung von Schutzschichten
KR100596196B1 (ko) * 2004-01-29 2006-07-03 한국과학기술연구원 볼로메타용 산화물 박막 및 이를 이용한 적외선 감지소자
JP4526835B2 (ja) * 2004-02-27 2010-08-18 独立行政法人科学技術振興機構 バナジウム酸化物及びこれを用いた記録材料
US7761053B2 (en) * 2006-09-08 2010-07-20 Mpb Communications Inc. Variable emittance thermochromic material and satellite system
US9952096B2 (en) 2012-06-05 2018-04-24 President And Fellows Of Harvard College Ultra-thin optical coatings and devices and methods of using ultra-thin optical coatings
WO2018140539A1 (en) 2017-01-26 2018-08-02 Hrl Laboratories, Llc A scalable, stackable, and beol-process compatible integrated neuron circuit
US10297751B2 (en) * 2017-01-26 2019-05-21 Hrl Laboratories, Llc Low-voltage threshold switch devices with current-controlled negative differential resistance based on electroformed vanadium oxide layer
US11861488B1 (en) 2017-06-09 2024-01-02 Hrl Laboratories, Llc Scalable excitatory and inhibitory neuron circuitry based on vanadium dioxide relaxation oscillators
US10600961B2 (en) * 2017-07-27 2020-03-24 Hrl Laboratories, Llc Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2917442A (en) * 1955-12-30 1959-12-15 Electronique & Automatisme Sa Method of making electroluminescent layers
US3294669A (en) * 1963-07-22 1966-12-27 Bell Telephone Labor Inc Apparatus for sputtering in a highly purified gas atmosphere

Also Published As

Publication number Publication date
FR1565917A (instruction) 1969-05-02
US3483110A (en) 1969-12-09

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