BE714227A - - Google Patents

Info

Publication number
BE714227A
BE714227A BE714227DA BE714227A BE 714227 A BE714227 A BE 714227A BE 714227D A BE714227D A BE 714227DA BE 714227 A BE714227 A BE 714227A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE714227A publication Critical patent/BE714227A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/904Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
BE714227D 1967-04-26 1968-04-25 BE714227A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63383467A 1967-04-26 1967-04-26

Publications (1)

Publication Number Publication Date
BE714227A true BE714227A (en:Method) 1968-10-25

Family

ID=24541308

Family Applications (1)

Application Number Title Priority Date Filing Date
BE714227D BE714227A (en:Method) 1967-04-26 1968-04-25

Country Status (5)

Country Link
US (1) US3486950A (en:Method)
BE (1) BE714227A (en:Method)
DE (1) DE1764180B2 (en:Method)
FR (1) FR1570017A (en:Method)
GB (1) GB1160058A (en:Method)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3645808A (en) * 1967-07-31 1972-02-29 Hitachi Ltd Method for fabricating a semiconductor-integrated circuit
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
JPS4826659B1 (en:Method) * 1969-11-15 1973-08-14
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same
US3838440A (en) * 1972-10-06 1974-09-24 Fairchild Camera Instr Co A monolithic mos/bipolar integrated circuit structure
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
US4140560A (en) * 1977-06-20 1979-02-20 International Rectifier Corporation Process for manufacture of fast recovery diodes
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
IT1245365B (it) * 1991-03-28 1994-09-20 Cons Ric Microelettronica Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione
DE10324100B4 (de) * 2003-05-27 2008-09-25 Infineon Technologies Ag Verfahren zur Herstellung eines robusten Halbleiterbauelements
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon

Also Published As

Publication number Publication date
DE1764180B2 (de) 1972-02-10
FR1570017A (en:Method) 1969-06-06
GB1160058A (en) 1969-07-30
US3486950A (en) 1969-12-30
DE1764180A1 (de) 1971-04-15

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