Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G3/00—Gain control in amplifiers or frequency changers
  • H03G3/20—Automatic control
  • H03G3/30—Automatic control in amplifiers having semiconductor devices
  • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G1/00—Details of arrangements for controlling amplification
  • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
  • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass

Applications Claiming Priority (1)

Publications (1)

Family

ID=10047251

Family Applications (1)

Country Status (7)

Families Citing this family (4)

Family Cites Families (4)

• 1967
  • 1967-03-31 GB GB04774/67A patent/GB1183384A/en not_active Expired
• 1968
  • 1968-03-26 NL NL6804217A patent/NL6804217A/xx unknown
  • 1968-03-29 BE BE713017D patent/BE713017A/xx unknown
  • 1968-03-29 CH CH465868A patent/CH485332A/de not_active IP Right Cessation
  • 1968-03-29 FR FR1560096D patent/FR1560096A/fr not_active Expired
  • 1968-03-30 DE DE19681764089 patent/DE1764089A1/de active Pending
  • 1968-04-01 US US717796A patent/US3518510A/en not_active Expired - Lifetime

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