BE706586A - - Google Patents
Info
- Publication number
- BE706586A BE706586A BE706586DA BE706586A BE 706586 A BE706586 A BE 706586A BE 706586D A BE706586D A BE 706586DA BE 706586 A BE706586 A BE 706586A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59567266A | 1966-11-21 | 1966-11-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE706586A true BE706586A (de) | 1968-04-01 |
Family
ID=24384195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE706586D BE706586A (de) | 1966-11-21 | 1967-11-16 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3462320A (de) |
BE (1) | BE706586A (de) |
DE (1) | DE1644045B2 (de) |
GB (1) | GB1211358A (de) |
NL (1) | NL6712368A (de) |
SE (1) | SE338764B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE754437A (fr) * | 1969-08-08 | 1971-01-18 | Western Electric Co | Dispositif electroluminescent ameliore |
US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
US3751309A (en) * | 1971-03-29 | 1973-08-07 | Bell Telephone Labor Inc | The use of a glass dopant for gap and electroluminescent diodes produced thereby |
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
JPS5325634B2 (de) * | 1973-04-04 | 1978-07-27 | ||
CA1019827A (en) * | 1973-10-26 | 1977-10-25 | Tatsuro Beppu | Method of manufacturing a gallium phosphide light-emitting device |
US4154630A (en) * | 1975-01-07 | 1979-05-15 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
US4026994A (en) * | 1975-02-17 | 1977-05-31 | Tokyo Shibaura Electric Co., Ltd. | Method for manufacturing gallium phosphide |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3277006A (en) * | 1962-06-28 | 1966-10-04 | Texas Instruments Inc | Double doping of iii-v compound semiconductor material |
US3411946A (en) * | 1963-09-05 | 1968-11-19 | Raytheon Co | Process and apparatus for producing an intermetallic compound |
US3278342A (en) * | 1963-10-14 | 1966-10-11 | Westinghouse Electric Corp | Method of growing crystalline members completely within the solution melt |
US3346414A (en) * | 1964-01-28 | 1967-10-10 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
-
1966
- 1966-11-21 US US595672A patent/US3462320A/en not_active Expired - Lifetime
-
1967
- 1967-09-08 NL NL6712368A patent/NL6712368A/xx unknown
- 1967-11-07 GB GB50585/67A patent/GB1211358A/en not_active Expired
- 1967-11-16 BE BE706586D patent/BE706586A/xx unknown
- 1967-11-18 DE DE19671644045 patent/DE1644045B2/de active Granted
- 1967-11-20 SE SE15922/67A patent/SE338764B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1211358A (en) | 1970-11-04 |
DE1644045B2 (de) | 1972-11-16 |
NL6712368A (de) | 1968-05-22 |
DE1644045A1 (de) | 1971-09-23 |
US3462320A (en) | 1969-08-19 |
SE338764B (de) | 1971-09-20 |