BE705581A - - Google Patents

Info

Publication number
BE705581A
BE705581A BE705581DA BE705581A BE 705581 A BE705581 A BE 705581A BE 705581D A BE705581D A BE 705581DA BE 705581 A BE705581 A BE 705581A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE705581A publication Critical patent/BE705581A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
BE705581D 1966-10-25 1967-10-24 BE705581A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6615060A NL6615060A (OSRAM) 1966-10-25 1966-10-25

Publications (1)

Publication Number Publication Date
BE705581A true BE705581A (OSRAM) 1968-04-24

Family

ID=19797992

Family Applications (1)

Application Number Title Priority Date Filing Date
BE705581D BE705581A (OSRAM) 1966-10-25 1967-10-24

Country Status (8)

Country Link
US (1) US3615930A (OSRAM)
JP (1) JPS5324778B1 (OSRAM)
AT (1) AT277161B (OSRAM)
BE (1) BE705581A (OSRAM)
CH (1) CH494064A (OSRAM)
GB (1) GB1182634A (OSRAM)
NL (1) NL6615060A (OSRAM)
SE (1) SE328853B (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565703A (en) * 1969-07-09 1971-02-23 Norton Research Corp Silicon carbide junction diode
US4063974A (en) * 1975-11-14 1977-12-20 Hughes Aircraft Company Planar reactive evaporation method for the deposition of compound semiconducting films
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4209474A (en) * 1977-08-31 1980-06-24 General Electric Company Process for preparing semiconducting silicon carbide sintered body
US5002905A (en) * 1986-08-22 1991-03-26 Stemcor Corporation Hexagonal silicon carbide platelets and preforms and methods for making and using same
US4981665A (en) * 1986-08-22 1991-01-01 Stemcor Corporation Hexagonal silicon carbide platelets and preforms and methods for making and using same
US4756895A (en) * 1986-08-22 1988-07-12 Stemcor Corporation Hexagonal silicon carbide platelets and preforms and methods for making and using same
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
FR2747401B1 (fr) * 1996-04-10 1998-05-15 Commissariat Energie Atomique Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
WO2017053883A1 (en) 2015-09-24 2017-03-30 Melior Innovations, Inc. Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Also Published As

Publication number Publication date
JPS5324778B1 (OSRAM) 1978-07-22
CH494064A (de) 1970-07-31
US3615930A (en) 1971-10-26
AT277161B (de) 1969-12-10
SE328853B (OSRAM) 1970-09-28
NL6615060A (OSRAM) 1968-04-26
DE1619986B2 (de) 1975-11-06
DE1619986A1 (de) 1970-03-26
GB1182634A (en) 1970-02-25

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