BE692824A - - Google Patents

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Publication number
BE692824A
BE692824A BE692824DA BE692824A BE 692824 A BE692824 A BE 692824A BE 692824D A BE692824D A BE 692824DA BE 692824 A BE692824 A BE 692824A
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BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE692824A publication Critical patent/BE692824A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2924/014—Solder alloys
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Ceramic Products (AREA)
  • Coating With Molten Metal (AREA)
BE692824D 1966-01-20 1967-01-18 BE692824A (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52198866A 1966-01-20 1966-01-20

Publications (1)

Publication Number Publication Date
BE692824A true BE692824A (no) 1967-07-03

Family

ID=24078966

Family Applications (1)

Application Number Title Priority Date Filing Date
BE692824D BE692824A (no) 1966-01-20 1967-01-18

Country Status (8)

Country Link
US (1) US3458925A (no)
BE (1) BE692824A (no)
CH (1) CH447300A (no)
DE (1) DE1300788C2 (no)
ES (1) ES335777A1 (no)
FR (1) FR1509407A (no)
GB (1) GB1097898A (no)
NL (1) NL157145B (no)

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* Cited by examiner, † Cited by third party
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US4032058A (en) * 1973-06-29 1977-06-28 Ibm Corporation Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
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US4290079A (en) * 1979-06-29 1981-09-15 International Business Machines Corporation Improved solder interconnection between a semiconductor device and a supporting substrate
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US4505029A (en) * 1981-03-23 1985-03-19 General Electric Company Semiconductor device with built-up low resistance contact
EP0111611B1 (fr) * 1982-10-28 1987-05-13 International Business Machines Corporation Perfectionnements aux procédés et équipements de dépôt par évaporation sous vide mettant en oeuvre un canon à électrons
US4545610A (en) * 1983-11-25 1985-10-08 International Business Machines Corporation Method for forming elongated solder connections between a semiconductor device and a supporting substrate
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US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
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US5255840A (en) * 1989-12-26 1993-10-26 Praxair Technology, Inc. Fluxless solder coating and joining
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US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
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US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
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DE1300788C2 (de) 1974-11-21
US3458925A (en) 1969-08-05
CH447300A (de) 1967-11-30
GB1097898A (en) 1968-01-03
NL157145B (nl) 1978-06-15
ES335777A1 (es) 1967-12-01
NL6700992A (no) 1967-07-21
DE1300788B (no) 1974-11-21
FR1509407A (fr) 1968-01-12

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