BE692824A - - Google Patents

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Publication number
BE692824A
BE692824A BE692824DA BE692824A BE 692824 A BE692824 A BE 692824A BE 692824D A BE692824D A BE 692824DA BE 692824 A BE692824 A BE 692824A
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BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE692824A publication Critical patent/BE692824A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Ceramic Products (AREA)
  • Coating With Molten Metal (AREA)
  • Wire Bonding (AREA)
BE692824D 1966-01-20 1967-01-18 BE692824A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52198866A 1966-01-20 1966-01-20

Publications (1)

Publication Number Publication Date
BE692824A true BE692824A (de) 1967-07-03

Family

ID=24078966

Family Applications (1)

Application Number Title Priority Date Filing Date
BE692824D BE692824A (de) 1966-01-20 1967-01-18

Country Status (8)

Country Link
US (1) US3458925A (de)
BE (1) BE692824A (de)
CH (1) CH447300A (de)
DE (1) DE1300788C2 (de)
ES (1) ES335777A1 (de)
FR (1) FR1509407A (de)
GB (1) GB1097898A (de)
NL (1) NL157145B (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594619A (en) * 1967-09-30 1971-07-20 Nippon Electric Co Face-bonded semiconductor device having improved heat dissipation
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
US3871015A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform connector joints
US3871014A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform solder wettable areas on the substrate
US3781609A (en) * 1971-11-03 1973-12-25 Ibm A semiconductor integrated circuit chip structure protected against impact damage from other chips during chip handling
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
US3894329A (en) * 1972-07-28 1975-07-15 Sperry Rand Corp Method of making high density electronic interconnections in a termination device
US3869787A (en) * 1973-01-02 1975-03-11 Honeywell Inf Systems Method for precisely aligning circuit devices coarsely positioned on a substrate
US3839727A (en) * 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
US4032058A (en) * 1973-06-29 1977-06-28 Ibm Corporation Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
JPS54139415A (en) * 1978-04-21 1979-10-29 Hitachi Ltd Semiconductor channel switch
US4246147A (en) * 1979-06-04 1981-01-20 International Business Machines Corporation Screenable and strippable solder mask and use thereof
US4290079A (en) * 1979-06-29 1981-09-15 International Business Machines Corporation Improved solder interconnection between a semiconductor device and a supporting substrate
JPS5728337A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Connecting constructin of semiconductor element
US4505029A (en) * 1981-03-23 1985-03-19 General Electric Company Semiconductor device with built-up low resistance contact
EP0111611B1 (de) * 1982-10-28 1987-05-13 International Business Machines Corporation Verfahren und Vorrichtung zum Überziehen durch Vakuumaufdampfen mittels einer Elektronenkanone
US4545610A (en) * 1983-11-25 1985-10-08 International Business Machines Corporation Method for forming elongated solder connections between a semiconductor device and a supporting substrate
IT1215268B (it) * 1985-04-26 1990-01-31 Ates Componenti Elettron Apparecchio e metodo per il confezionamento perfezionato di dispositivi semiconduttori.
US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
US4760948A (en) * 1986-12-23 1988-08-02 Rca Corporation Leadless chip carrier assembly and method
US4935627A (en) * 1989-03-13 1990-06-19 Honeywell Inc. Electrical interconnection apparatus for achieving precise alignment of hybrid components
FR2651025B1 (fr) * 1989-08-18 1991-10-18 Commissariat Energie Atomique Assemblage de pieces faisant un angle entre elles et procede d'obtention de cet assemblage
US5255840A (en) * 1989-12-26 1993-10-26 Praxair Technology, Inc. Fluxless solder coating and joining
JPH045844A (ja) * 1990-04-23 1992-01-09 Nippon Mektron Ltd Ｉｃ搭載用多層回路基板及びその製造法
US5198695A (en) * 1990-12-10 1993-03-30 Westinghouse Electric Corp. Semiconductor wafer with circuits bonded to a substrate
US5266520A (en) * 1991-02-11 1993-11-30 International Business Machines Corporation Electronic packaging with varying height connectors
US5173763A (en) * 1991-02-11 1992-12-22 International Business Machines Corporation Electronic packaging with varying height connectors
US5316788A (en) * 1991-07-26 1994-05-31 International Business Machines Corporation Applying solder to high density substrates
US5133495A (en) * 1991-08-12 1992-07-28 International Business Machines Corporation Method of bonding flexible circuit to circuitized substrate to provide electrical connection therebetween
US5203075A (en) * 1991-08-12 1993-04-20 Inernational Business Machines Method of bonding flexible circuit to cicuitized substrate to provide electrical connection therebetween using different solders
US5186383A (en) * 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
US5281684A (en) * 1992-04-30 1994-01-25 Motorola, Inc. Solder bumping of integrated circuit die
JP2796919B2 (ja) * 1992-05-11 1998-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション メタライゼーション複合体および半導体デバイス
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
US5396702A (en) * 1993-12-15 1995-03-14 At&T Corp. Method for forming solder bumps on a substrate using an electrodeposition technique
US5473814A (en) * 1994-01-07 1995-12-12 International Business Machines Corporation Process for surface mounting flip chip carrier modules
US6319810B1 (en) 1994-01-20 2001-11-20 Fujitsu Limited Method for forming solder bumps
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
US5643831A (en) * 1994-01-20 1997-07-01 Fujitsu Limited Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device
MY112145A (en) * 1994-07-11 2001-04-30 Ibm Direct attachment of heat sink attached directly to flip chip using flexible epoxy
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
DE29500428U1 (de) * 1995-01-12 1995-03-30 Hewlett Packard Gmbh Verbindungsbauteil
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
WO1996031905A1 (en) 1995-04-05 1996-10-10 Mcnc A solder bump structure for a microelectronic substrate
US6344234B1 (en) * 1995-06-07 2002-02-05 International Business Machines Corportion Method for forming reflowed solder ball with low melting point metal cap
US5660321A (en) * 1996-03-29 1997-08-26 Intel Corporation Method for controlling solder bump height and volume for substrates containing both pad-on and pad-off via contacts
JP3292068B2 (ja) * 1996-11-11 2002-06-17 富士通株式会社 金属バンプの製造方法
US6000603A (en) * 1997-05-23 1999-12-14 3M Innovative Properties Company Patterned array of metal balls and methods of making
US7007833B2 (en) * 1997-05-27 2006-03-07 Mackay John Forming solder balls on substrates
US7288471B2 (en) * 1997-05-27 2007-10-30 Mackay John Bumping electronic components using transfer substrates
US7654432B2 (en) 1997-05-27 2010-02-02 Wstp, Llc Forming solder balls on substrates
US7842599B2 (en) * 1997-05-27 2010-11-30 Wstp, Llc Bumping electronic components using transfer substrates
US7819301B2 (en) * 1997-05-27 2010-10-26 Wstp, Llc Bumping electronic components using transfer substrates
US6609652B2 (en) 1997-05-27 2003-08-26 Spheretek, Llc Ball bumping substrates, particuarly wafers
US6293456B1 (en) 1997-05-27 2001-09-25 Spheretek, Llc Methods for forming solder balls on substrates
US6456099B1 (en) * 1998-12-31 2002-09-24 Formfactor, Inc. Special contact points for accessing internal circuitry of an integrated circuit
US6047637A (en) * 1999-06-17 2000-04-11 Fujitsu Limited Method of paste printing using stencil and masking layer
EP1332654B1 (de) 2000-11-10 2005-01-12 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US6489229B1 (en) 2001-09-07 2002-12-03 Motorola, Inc. Method of forming a semiconductor device having conductive bumps without using gold
US6732908B2 (en) * 2002-01-18 2004-05-11 International Business Machines Corporation High density raised stud microjoining system and methods of fabricating the same
US7531898B2 (en) 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
WO2004001837A2 (en) 2002-06-25 2003-12-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
TWI225899B (en) 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US6951775B2 (en) * 2003-06-28 2005-10-04 International Business Machines Corporation Method for forming interconnects on thin wafers
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
WO2005101499A2 (en) 2004-04-13 2005-10-27 Unitive International Limited Methods of forming solder bumps on exposed metal pads and related structures
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7745301B2 (en) * 2005-08-22 2010-06-29 Terapede, Llc Methods and apparatus for high-density chip connectivity
US8957511B2 (en) * 2005-08-22 2015-02-17 Madhukar B. Vora Apparatus and methods for high-density chip connectivity
WO2007085484A1 (de) * 2006-01-30 2007-08-02 Behr Gmbh & Co. Kg Verfahren zur herstellung eines metallteils
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
TW201208007A (en) * 2010-08-02 2012-02-16 Advanced Semiconductor Eng Semiconductor package
WO2012017507A1 (ja) * 2010-08-06 2012-02-09 パナソニック株式会社 回路基板及びその製造方法
US10096540B2 (en) * 2011-05-13 2018-10-09 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming dummy pillars between semiconductor die and substrate for maintaining standoff distance
KR101782503B1 (ko) * 2011-05-18 2017-09-28 삼성전자 주식회사 솔더 범프 붕괴를 억제하는 반도체 소자의 범프 형성방법
US20130140671A1 (en) * 2011-12-06 2013-06-06 Win Semiconductors Corp. Compound semiconductor integrated circuit with three-dimensionally formed components

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1072455B (de) * 1959-12-31 Siemens ß. Halske Aktiengesellschaft, Berlin und München Lötverfahren für gedruckte Schaltungen
US2781282A (en) * 1953-09-21 1957-02-12 Libbey Owens Ford Glass Co Method and apparatus for masking support bodies
US2925647A (en) * 1958-01-28 1960-02-23 Engelhard Ind Inc Method of making electrical contacts
US3321828A (en) * 1962-01-02 1967-05-30 Gen Electric Aluminum brazing
US3261713A (en) * 1962-03-03 1966-07-19 Philips Corp Method of coating surface with solder
US3293076A (en) * 1962-04-17 1966-12-20 Nat Res Corp Process of forming a superconductor
US3235959A (en) * 1962-06-25 1966-02-22 Alloys Res & Mfg Corp Brazing aluminum based parts
US3292240A (en) * 1963-08-08 1966-12-20 Ibm Method of fabricating microminiature functional components
US3303393A (en) * 1963-12-27 1967-02-07 Ibm Terminals for microminiaturized devices and methods of connecting same to circuit panels
US3286340A (en) * 1964-02-28 1966-11-22 Philco Corp Fabrication of semiconductor units

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NL6700992A (de) 1967-07-21
FR1509407A (fr) 1968-01-12
CH447300A (de) 1967-11-30
DE1300788C2 (de) 1974-11-21
GB1097898A (en) 1968-01-03
US3458925A (en) 1969-08-05
ES335777A1 (es) 1967-12-01
NL157145B (nl) 1978-06-15
DE1300788B (de) 1974-11-21

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