BE676467A - - Google Patents

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Publication number
BE676467A
BE676467A BE676467DA BE676467A BE 676467 A BE676467 A BE 676467A BE 676467D A BE676467D A BE 676467DA BE 676467 A BE676467 A BE 676467A
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BE
Belgium
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Publication date
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Publication of BE676467A publication Critical patent/BE676467A/xx

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    • HELECTRICITY
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/351Thermal stress

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
BE676467D 1965-02-16 1966-02-15 BE676467A (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ27519A DE1283969B (de) 1965-02-16 1965-02-16 Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
BE676467A true BE676467A (el) 1966-08-16

Family

ID=7202990

Family Applications (1)

Application Number Title Priority Date Filing Date
BE676467D BE676467A (el) 1965-02-16 1966-02-15

Country Status (6)

Country Link
US (1) US3471752A (el)
BE (1) BE676467A (el)
DE (1) DE1283969B (el)
GB (1) GB1066200A (el)
IE (1) IE29877L (el)
NL (1) NL153722B (el)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631892B2 (el) * 1972-04-27 1981-07-24
JPS49113555U (el) * 1973-01-25 1974-09-27
US3814994A (en) * 1973-03-07 1974-06-04 Gen Motors Corp Four terminal power transistor
US4180414A (en) * 1978-07-10 1979-12-25 Optical Coating Laboratory, Inc. Concentrator solar cell array module
JPS5753947A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Transistor and electronic device containing it
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98125C (el) * 1954-08-26 1900-01-01
US2948835A (en) * 1958-10-21 1960-08-09 Texas Instruments Inc Transistor structure
US3020454A (en) * 1959-11-09 1962-02-06 Solid State Products Inc Sealing of electrical semiconductor devices
US3160798A (en) * 1959-12-07 1964-12-08 Gen Electric Semiconductor devices including means for securing the elements
BE638960A (el) * 1962-10-23
CH440478A (de) * 1963-07-01 1967-07-31 Asea Ab Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3283224A (en) * 1965-08-18 1966-11-01 Trw Semiconductors Inc Mold capping semiconductor device

Also Published As

Publication number Publication date
NL6601886A (el) 1966-08-17
US3471752A (en) 1969-10-07
NL153722B (nl) 1977-06-15
IE29877L (en) 1966-08-16
DE1283969B (de) 1968-11-28
GB1066200A (en) 1967-04-19

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