BE675593A - - Google Patents
Info
- Publication number
- BE675593A BE675593A BE675593DA BE675593A BE 675593 A BE675593 A BE 675593A BE 675593D A BE675593D A BE 675593DA BE 675593 A BE675593 A BE 675593A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES95239A DE1254590B (de) | 1965-01-29 | 1965-01-29 | Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE675593A true BE675593A (pt) | 1966-07-26 |
Family
ID=7519234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE675593D BE675593A (pt) | 1965-01-29 | 1966-01-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3454367A (pt) |
| BE (1) | BE675593A (pt) |
| CH (1) | CH430656A (pt) |
| DE (1) | DE1254590B (pt) |
| GB (1) | GB1081827A (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3876388A (en) * | 1968-10-30 | 1975-04-08 | Siemens Ag | Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting |
| DE2658368C2 (de) | 1976-12-23 | 1982-09-23 | Degussa Ag, 6000 Frankfurt | Schwefel und Phosphor enthaltende Organosiliciumverbindungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
| US5361128A (en) * | 1992-09-10 | 1994-11-01 | Hemlock Semiconductor Corporation | Method for analyzing irregular shaped chunked silicon for contaminates |
| JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
| US6251182B1 (en) | 1993-05-11 | 2001-06-26 | Hemlock Semiconductor Corporation | Susceptor for float-zone apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2743200A (en) * | 1954-05-27 | 1956-04-24 | Bell Telephone Labor Inc | Method of forming junctions in silicon |
| US2985519A (en) * | 1958-06-02 | 1961-05-23 | Du Pont | Production of silicon |
| US3206286A (en) * | 1959-07-23 | 1965-09-14 | Westinghouse Electric Corp | Apparatus for growing crystals |
| US2992311A (en) * | 1960-09-28 | 1961-07-11 | Siemens Ag | Method and apparatus for floatingzone melting of semiconductor rods |
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1965
- 1965-01-29 DE DES95239A patent/DE1254590B/de active Pending
- 1965-10-19 US US497681A patent/US3454367A/en not_active Expired - Lifetime
-
1966
- 1966-01-25 CH CH98266A patent/CH430656A/de unknown
- 1966-01-26 BE BE675593D patent/BE675593A/xx unknown
- 1966-01-28 GB GB4038/66A patent/GB1081827A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1081827A (en) | 1967-09-06 |
| US3454367A (en) | 1969-07-08 |
| DE1254590B (de) | 1967-11-23 |
| CH430656A (de) | 1967-02-28 |