BE674340A - - Google Patents
Info
- Publication number
- BE674340A BE674340A BE674340DA BE674340A BE 674340 A BE674340 A BE 674340A BE 674340D A BE674340D A BE 674340DA BE 674340 A BE674340 A BE 674340A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US428733A US3369991A (en) | 1965-01-28 | 1965-01-28 | Apparatus for cathode sputtering including a shielded rf electrode |
| US69285567A | 1967-12-22 | 1967-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE674340A true BE674340A (US06811534-20041102-M00003.png) | 1966-04-15 |
Family
ID=27027888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE674340D BE674340A (US06811534-20041102-M00003.png) | 1965-01-28 | 1965-12-27 |
Country Status (8)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3528906A (en) * | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
| US3630881A (en) * | 1970-01-22 | 1971-12-28 | Ibm | Cathode-target assembly for rf sputtering apparatus |
| US3884793A (en) * | 1971-09-07 | 1975-05-20 | Telic Corp | Electrode type glow discharge apparatus |
| GB1443827A (en) * | 1973-04-27 | 1976-07-28 | Triplex Safety Glass Co | Reactive sputtering apparatus and cathode units therefor |
| US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
| US4170662A (en) * | 1974-11-05 | 1979-10-09 | Eastman Kodak Company | Plasma plating |
| DE3206413A1 (de) * | 1982-02-23 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von aus silizium oder aus siliziden hochschmelzender metalle bestehenden schichten unter verwendung einer planar-magnetron-zerstaeubungsanlage |
| DE3272083D1 (en) | 1982-03-31 | 1986-08-28 | Ibm Deutschland | Reactor for reactive ion etching, and etching process |
| EP0106623B1 (en) * | 1982-10-05 | 1990-05-23 | Fujitsu Limited | Sputtering apparatus |
| CH668565A5 (de) * | 1986-06-23 | 1989-01-13 | Balzers Hochvakuum | Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz. |
| US4802968A (en) * | 1988-01-29 | 1989-02-07 | International Business Machines Corporation | RF plasma processing apparatus |
| US5232569A (en) * | 1992-03-09 | 1993-08-03 | Tulip Memory Systems, Inc. | Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates |
| US5490910A (en) * | 1992-03-09 | 1996-02-13 | Tulip Memory Systems, Inc. | Circularly symmetric sputtering apparatus with hollow-cathode plasma devices |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
| US5646474A (en) * | 1995-03-27 | 1997-07-08 | Wayne State University | Boron nitride cold cathode |
| US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
| US10748740B2 (en) * | 2018-08-21 | 2020-08-18 | Fei Company | X-ray and particle shield for improved vacuum conductivity |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1926336A (en) * | 1930-09-13 | 1933-09-12 | Fansteel Prod Co Inc | Electrode and method of making same |
| BE634012A (US06811534-20041102-M00003.png) * | 1961-10-03 | |||
| US3325392A (en) * | 1961-11-29 | 1967-06-13 | Siemens Ag | Method of producing monocrystalline layers of silicon on monocrystalline substrates |
| US3170810A (en) * | 1962-05-24 | 1965-02-23 | Western Electric Co | Methods of and apparatus for forming substances on preselected areas of substrates |
| FR1379512A (fr) * | 1963-01-18 | 1964-11-20 | Asea Ab | Procédé pour obtenir des couches métalliques ou diélectriques par érosion cathodique |
| US3347772A (en) * | 1964-03-02 | 1967-10-17 | Schjeldahl Co G T | Rf sputtering apparatus including a capacitive lead-in for an rf potential |
-
1965
- 1965-01-28 US US428733A patent/US3369991A/en not_active Expired - Lifetime
- 1965-12-27 BE BE674340D patent/BE674340A/xx unknown
-
1966
- 1966-01-03 FR FR44582A patent/FR1469226A/fr not_active Expired
- 1966-01-04 GB GB259/66A patent/GB1114644A/en not_active Expired
- 1966-01-21 DE DE1521321A patent/DE1521321C2/de not_active Expired
- 1966-01-26 NL NL666601015A patent/NL147789B/xx not_active IP Right Cessation
- 1966-01-27 CH CH114266A patent/CH478254A/de not_active IP Right Cessation
- 1966-01-28 SE SE01164/66A patent/SE333088B/xx unknown
-
1967
- 1967-12-22 US US692855A patent/US3532615A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1521321B1 (de) | 1971-06-09 |
| NL6601015A (US06811534-20041102-M00003.png) | 1966-07-29 |
| SE333088B (US06811534-20041102-M00003.png) | 1971-03-01 |
| NL147789B (nl) | 1975-11-17 |
| DE1521321C2 (de) | 1974-11-21 |
| US3532615A (en) | 1970-10-06 |
| CH478254A (de) | 1969-09-15 |
| GB1114644A (en) | 1968-05-22 |
| FR1469226A (fr) | 1967-02-10 |
| US3369991A (en) | 1968-02-20 |
