BE658110A - - Google Patents
Info
- Publication number
- BE658110A BE658110A BE658110DA BE658110A BE 658110 A BE658110 A BE 658110A BE 658110D A BE658110D A BE 658110DA BE 658110 A BE658110 A BE 658110A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0089028 | 1964-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE658110A true BE658110A (en:Method) | 1965-07-12 |
Family
ID=7514832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE658110D BE658110A (en:Method) | 1964-01-13 | 1965-01-11 |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE658110A (en:Method) |
| CH (1) | CH474032A (en:Method) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4010064A (en) * | 1975-05-27 | 1977-03-01 | International Business Machines Corporation | Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel |
| US4268483A (en) * | 1976-03-17 | 1981-05-19 | Metals Research Limited | Improvements in and relating to the growth of crystalline material |
| US4747774A (en) * | 1987-02-09 | 1988-05-31 | Westinghouse Electric Corp. | Conforming crucible/susceptor system for silicon crystal growth |
| USH520H (en) | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
| US4865682A (en) * | 1983-10-24 | 1989-09-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Growth method of an organic compound single crystal and a boat used therefor |
| US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
-
1964
- 1964-11-04 CH CH1429964A patent/CH474032A/de not_active IP Right Cessation
-
1965
- 1965-01-11 BE BE658110D patent/BE658110A/xx unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4010064A (en) * | 1975-05-27 | 1977-03-01 | International Business Machines Corporation | Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel |
| US4268483A (en) * | 1976-03-17 | 1981-05-19 | Metals Research Limited | Improvements in and relating to the growth of crystalline material |
| US4865682A (en) * | 1983-10-24 | 1989-09-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Growth method of an organic compound single crystal and a boat used therefor |
| USH520H (en) | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
| US4747774A (en) * | 1987-02-09 | 1988-05-31 | Westinghouse Electric Corp. | Conforming crucible/susceptor system for silicon crystal growth |
| US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| CH474032A (de) | 1969-06-15 |