BE657756A - - Google Patents

Info

Publication number
BE657756A
BE657756A BE657756DA BE657756A BE 657756 A BE657756 A BE 657756A BE 657756D A BE657756D A BE 657756DA BE 657756 A BE657756 A BE 657756A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE657756A publication Critical patent/BE657756A/xx

Links

Classifications

    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/20—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/1266—O, S, or organic compound in metal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
BE657756D 1964-01-02 1964-12-30 BE657756A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US335300A US3293010A (en) 1964-01-02 1964-01-02 Passivated alloy diode

Publications (1)

Publication Number Publication Date
BE657756A true BE657756A (en:Method) 1965-04-16

Family

ID=23311179

Family Applications (1)

Application Number Title Priority Date Filing Date
BE657756D BE657756A (en:Method) 1964-01-02 1964-12-30

Country Status (6)

Country Link
US (1) US3293010A (en:Method)
BE (1) BE657756A (en:Method)
CH (1) CH419356A (en:Method)
DE (1) DE1489133A1 (en:Method)
GB (1) GB1080560A (en:Method)
NL (1) NL6415321A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457469A (en) * 1965-11-15 1969-07-22 Motorola Inc Noise diode having an alloy zener junction
DE1514655A1 (de) * 1965-12-30 1969-08-28 Siemens Ag Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
DE1764759C3 (de) * 1968-07-31 1983-11-10 Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiterzone einer Diode
US3612959A (en) * 1969-01-31 1971-10-12 Unitrode Corp Planar zener diodes having uniform junction breakdown characteristics
US3649882A (en) * 1970-05-13 1972-03-14 Albert Louis Hoffman Diffused alloyed emitter and the like and a method of manufacture thereof
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL189769C (nl) * 1953-12-30 Amp Akzo Corp Werkwijze voor het handhaven van badoplossingen voor het stroomloos afzetten van koper op substraatplaten in inrichtingen uit metaal.
BE538469A (en:Method) * 1954-05-27
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
BE539938A (en:Method) * 1954-07-21
US2861909A (en) * 1955-04-25 1958-11-25 Rca Corp Semiconductor devices
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
US3180766A (en) * 1958-12-30 1965-04-27 Raytheon Co Heavily doped base rings
US3124493A (en) * 1959-01-26 1964-03-10 Method for making the same
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor

Also Published As

Publication number Publication date
US3293010A (en) 1966-12-20
DE1489133A1 (de) 1969-05-08
NL6415321A (en:Method) 1965-07-05
CH419356A (fr) 1966-08-31
GB1080560A (en) 1967-08-23

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