BE656872A - - Google Patents

Info

Publication number
BE656872A
BE656872A BE656872A BE656872A BE656872A BE 656872 A BE656872 A BE 656872A BE 656872 A BE656872 A BE 656872A BE 656872 A BE656872 A BE 656872A BE 656872 A BE656872 A BE 656872A
Authority
BE
Belgium
Application number
BE656872A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE656872A publication Critical patent/BE656872A/xx

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Bipolar Integrated Circuits (AREA)
BE656872A 1963-12-09 1964-12-09 BE656872A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES88651A DE1239871B (de) 1963-12-09 1963-12-09 Druckempfindliche Halbleiteranordnung

Publications (1)

Publication Number Publication Date
BE656872A true BE656872A (ko) 1965-06-09

Family

ID=7514598

Family Applications (1)

Application Number Title Priority Date Filing Date
BE656872A BE656872A (ko) 1963-12-09 1964-12-09

Country Status (7)

Country Link
US (1) US3319140A (ko)
BE (1) BE656872A (ko)
CH (1) CH431730A (ko)
DE (1) DE1239871B (ko)
GB (1) GB1075488A (ko)
NL (1) NL6413213A (ko)
SE (1) SE329414B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3414779A (en) * 1965-12-08 1968-12-03 Northern Electric Co Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties
NL6608194A (ko) * 1966-06-14 1967-12-15
US3624315A (en) * 1967-01-23 1971-11-30 Max E Broce Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
JPS5522949B2 (ko) * 1972-02-19 1980-06-19

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE490715A (ko) * 1948-08-19
US2632062A (en) * 1949-06-15 1953-03-17 Bell Telephone Labor Inc Semiconductor transducer
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions

Also Published As

Publication number Publication date
SE329414B (ko) 1970-10-12
NL6413213A (ko) 1965-06-10
GB1075488A (en) 1967-07-12
DE1239871B (de) 1967-05-03
CH431730A (de) 1967-03-15
US3319140A (en) 1967-05-09

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