BE642147A - - Google Patents

Info

Publication number
BE642147A
BE642147A BE642147A BE642147A BE642147A BE 642147 A BE642147 A BE 642147A BE 642147 A BE642147 A BE 642147A BE 642147 A BE642147 A BE 642147A BE 642147 A BE642147 A BE 642147A
Authority
BE
Belgium
Application number
BE642147A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE642147A publication Critical patent/BE642147A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
BE642147A 1963-01-18 1964-01-06 BE642147A (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US252341A US3275910A (en) 1963-01-18 1963-01-18 Planar transistor with a relative higher-resistivity base region

Publications (1)

Publication Number Publication Date
BE642147A true BE642147A (sv) 1964-05-04

Family

ID=22955627

Family Applications (1)

Application Number Title Priority Date Filing Date
BE642147A BE642147A (sv) 1963-01-18 1964-01-06

Country Status (5)

Country Link
US (1) US3275910A (sv)
BE (1) BE642147A (sv)
DE (1) DE1296263B (sv)
GB (1) GB1058240A (sv)
NL (1) NL6400281A (sv)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345222A (en) * 1963-09-28 1967-10-03 Hitachi Ltd Method of forming a semiconductor device by etching and epitaxial deposition
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture
US3458367A (en) * 1964-07-18 1969-07-29 Fujitsu Ltd Method of manufacture of superhigh frequency transistor
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3406049A (en) * 1965-04-28 1968-10-15 Ibm Epitaxial semiconductor layer as a diffusion mask
US3365629A (en) * 1965-06-24 1968-01-23 Sprague Electric Co Chopper amplifier having high breakdown voltage
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
US3465213A (en) * 1966-06-20 1969-09-02 Frances B Hugle Self-compensating structure for limiting base drive current in transistors
US3457125A (en) * 1966-06-21 1969-07-22 Union Carbide Corp Passivation of semiconductor devices
US3507714A (en) * 1967-08-16 1970-04-21 Westinghouse Electric Corp High current single diffused transistor
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
NL7007171A (sv) * 1970-05-16 1971-11-18
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (sv) * 1955-11-04
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
US2959719A (en) * 1957-06-29 1960-11-08 Sony Corp Semiconductor device
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
CH335368A (fr) * 1957-12-28 1958-12-31 Suisse Horlogerie Transistor
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
NL230316A (sv) * 1958-08-07
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US3108209A (en) * 1959-05-21 1963-10-22 Motorola Inc Transistor device and method of manufacture
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member

Also Published As

Publication number Publication date
US3275910A (en) 1966-09-27
DE1296263B (de) 1969-05-29
GB1058240A (en) 1967-02-08
NL6400281A (sv) 1964-07-20

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