BE642103A - - Google Patents
Info
- Publication number
- BE642103A BE642103A BE642103A BE642103A BE642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US249530A US3249831A (en) | 1963-01-04 | 1963-01-04 | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE642103A true BE642103A (US07867960-20110111-C00005.png) | 1964-05-04 |
Family
ID=22943874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE642103A BE642103A (US07867960-20110111-C00005.png) | 1963-01-04 | 1964-01-03 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3249831A (US07867960-20110111-C00005.png) |
| BE (1) | BE642103A (US07867960-20110111-C00005.png) |
| FR (1) | FR1378697A (US07867960-20110111-C00005.png) |
| GB (1) | GB1018399A (US07867960-20110111-C00005.png) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
| US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
| BR6462522D0 (pt) * | 1963-10-28 | 1973-05-15 | Rca Corp | Dispositivos semicondutores e processo de fabrica-los |
| US3389024A (en) * | 1964-05-12 | 1968-06-18 | Licentia Gmbh | Method of forming a semiconductor by diffusion through the use of a cobalt salt |
| GB1030670A (en) * | 1964-12-02 | 1966-05-25 | Standard Telephones Cables Ltd | Semiconductor devices |
| US3341749A (en) * | 1964-08-10 | 1967-09-12 | Ass Elect Ind | Four layer semiconductor devices with improved high voltage characteristics |
| US3354006A (en) * | 1965-03-01 | 1967-11-21 | Texas Instruments Inc | Method of forming a diode by using a mask and diffusion |
| US3642544A (en) * | 1965-08-02 | 1972-02-15 | Ibm | Method of fabricating solid-state devices |
| GB1158585A (en) * | 1965-12-06 | 1969-07-16 | Lucas Industries Ltd | Gate Controlled Switches |
| US3475235A (en) * | 1966-10-05 | 1969-10-28 | Westinghouse Electric Corp | Process for fabricating a semiconductor device |
| GB1209313A (en) * | 1967-04-11 | 1970-10-21 | Lucas Industries Ltd | HIGH VOLTAGE n-p-n TRANSISTORS |
| US3879230A (en) * | 1970-02-07 | 1975-04-22 | Tokyo Shibaura Electric Co | Semiconductor device diffusion source containing as impurities AS and P or B |
| DE2049696C3 (de) * | 1970-02-07 | 1982-02-18 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | Halbleiterbauelement und Verfahren zum Herstellen |
| US3858238A (en) * | 1970-02-07 | 1974-12-31 | Tokyo Shibaura Electric Co | Semiconductor devices containing as impurities as and p or b and the mehtod of manufacturing the same |
| DE2104752B2 (de) * | 1971-02-02 | 1975-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
| US3798084A (en) * | 1972-08-11 | 1974-03-19 | Ibm | Simultaneous diffusion processing |
| US3793093A (en) * | 1973-01-12 | 1974-02-19 | Handotai Kenkyu Shinkokai | Method for producing a semiconductor device having a very small deviation in lattice constant |
| DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
| JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
| JPS5624972A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Thyristor |
| IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
| US7833473B2 (en) * | 2004-07-30 | 2010-11-16 | General Electric Company | Material for storage and production of hydrogen, and related methods and apparatus |
| JP2014236093A (ja) | 2013-05-31 | 2014-12-15 | サンケン電気株式会社 | シリコン系基板、半導体装置、及び、半導体装置の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
| NL98719C (US07867960-20110111-C00005.png) * | 1954-02-27 | |||
| US2936256A (en) * | 1954-06-01 | 1960-05-10 | Gen Electric | Semiconductor devices |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
| NL204025A (US07867960-20110111-C00005.png) * | 1955-03-23 | |||
| US2806983A (en) * | 1956-06-01 | 1957-09-17 | Gen Electric | Remote base transistor |
| US2862840A (en) * | 1956-09-26 | 1958-12-02 | Gen Electric | Semiconductor devices |
| US2981874A (en) * | 1957-05-31 | 1961-04-25 | Ibm | High speed, high current transistor |
| US2959719A (en) * | 1957-06-29 | 1960-11-08 | Sony Corp | Semiconductor device |
| US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
| NL111773C (US07867960-20110111-C00005.png) * | 1958-08-07 | |||
| US3043725A (en) * | 1958-11-06 | 1962-07-10 | Texas Instruments Inc | Photo transistor |
| US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
| US3025192A (en) * | 1959-01-02 | 1962-03-13 | Norton Co | Silicon carbide crystals and processes and furnaces for making them |
| NL122784C (US07867960-20110111-C00005.png) * | 1959-04-15 | |||
| US2993818A (en) * | 1959-04-23 | 1961-07-25 | Texas Instruments Inc | Method for growing semiconductor crystals |
| US3070466A (en) * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material |
| NL135881C (US07867960-20110111-C00005.png) * | 1959-08-05 | |||
| DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
| US3124862A (en) * | 1959-12-14 | 1964-03-17 | Alloy double-diffused semiconductor |
-
1963
- 1963-01-04 US US249530A patent/US3249831A/en not_active Expired - Lifetime
- 1963-12-31 GB GB51278/63A patent/GB1018399A/en not_active Expired
-
1964
- 1964-01-03 BE BE642103A patent/BE642103A/xx unknown
- 1964-01-03 FR FR959249A patent/FR1378697A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1018399A (en) | 1966-01-26 |
| FR1378697A (fr) | 1964-11-13 |
| US3249831A (en) | 1966-05-03 |
